| No. |
Part Name |
Description |
Manufacturer |
| 1141 |
2N884A |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1142 |
2N885 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1143 |
2N885 |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1144 |
2N885A |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1145 |
2N886 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1146 |
2N886 |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1147 |
2N886A |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1148 |
2N887 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1149 |
2N887 |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1150 |
2N887A |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1151 |
2N888 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1152 |
2N888 |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1153 |
2N888A |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1154 |
2N889 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1155 |
2N889 |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1156 |
2N889A |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1157 |
2N890 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1158 |
2N890 |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1159 |
2N891 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1160 |
2N891 |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1161 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
| 1162 |
2N998 |
Darlington amplifier containing two NPN silicon anular transistors |
Motorola |
| 1163 |
2N999 |
Darlington amplifier containing two NPN silicon anular transistors |
Motorola |
| 1164 |
2NOR61 |
Thyristor trigger and control modules, twin NOR |
Mullard |
| 1165 |
2SA1091 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 1166 |
2SA1091 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 1167 |
2SA1384 |
Transistor Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 1168 |
2SA1384 |
Transistor Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 1169 |
2SA1432 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. |
TOSHIBA |
| 1170 |
2SA1432 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. |
TOSHIBA |
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