| No. |
Part Name |
Description |
Manufacturer |
| 1051 |
2SD1819 |
Transistor - Silicon NPN Epitaxial Planar Type - For general amplification - Complementary pair with 2SB1218 and 2SB1218A |
Panasonic |
| 1052 |
2SD1994 |
Transistor - Silicon NPN Epitaxial Planar Type - For low-frequency power amplification and drive, Complementary pair with 2SB1322 and 2SB1322A |
Panasonic |
| 1053 |
2SD2181 |
Transistor - Silicon NPN Epitaxial Planar Type - For low-frequency output amplification - Complementary pair with 2SB1437 |
Panasonic |
| 1054 |
2SD2209 |
For power amplification and switching |
Panasonic |
| 1055 |
2SD227 |
Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. |
USHA India LTD |
| 1056 |
2SD2486 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
| 1057 |
2SD2527 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
| 1058 |
2SD2675 |
General purpose amplification (30V/ 1A) |
ROHM |
| 1059 |
2SD2703 |
General purpose amplification (30V, 1A) |
ROHM |
| 1060 |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. |
USHA India LTD |
| 1061 |
2SD976 |
POWER SWITCHING TV HORIZONTAL DEFLECATION OUTPUT |
Unknow |
| 1062 |
2SH13 |
Silicon P emitter unijunction transistor, relaxation oscillator, SCR Trigger and Timer Applications |
TOSHIBA |
| 1063 |
2SH14 |
Silicon P emitter unijunction transistor, relaxation oscillator, SCR Trigger and Timer Applications |
TOSHIBA |
| 1064 |
2SJ145 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 1065 |
2SK2331 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1066 |
2SK2332 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1067 |
2SK2497 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1068 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
| 1069 |
2SK2856 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1070 |
2SK2881 |
For Low Frequency Amplify Application N Channel Junction type Micro(Frame type) |
Isahaya Electronics Corporation |
| 1071 |
2SK3179 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1072 |
2SK930 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 1073 |
2Z12 |
ZENER DIODE SILICON DIFFUSED TYPE CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS |
TOSHIBA |
| 1074 |
2Z13 |
ZENER DIODE SILICON DIFFUSED TYPE CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS |
TOSHIBA |
| 1075 |
2Z15 |
ZENER DIODE SILICON DIFFUSED TYPE CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS |
TOSHIBA |
| 1076 |
2Z16 |
ZENER DIODE SILICON DIFFUSED TYPE CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS |
TOSHIBA |
| 1077 |
2Z16A |
ZENER DIODE SILICON DIFFUSED TYPE CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS |
TOSHIBA |
| 1078 |
2Z18 |
ZENER DIODE SILICON DIFFUSED TYPE CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS |
TOSHIBA |
| 1079 |
2Z18A |
ZENER DIODE SILICON DIFFUSED TYPE CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS |
TOSHIBA |
| 1080 |
2Z20 |
ZENER DIODE SILICON DIFFUSED TYPE CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS |
TOSHIBA |
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