| No. |
Part Name |
Description |
Manufacturer |
| 961 |
2SC5485 |
FOR HIGH CURRENT APPLICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 962 |
2SC549 |
Industrial Transistor Specification Table |
TOSHIBA |
| 963 |
2SC550 |
Industrial Transistor Specification Table |
TOSHIBA |
| 964 |
2SC5507 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 965 |
2SC5507-T2 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 966 |
2SC5508 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 967 |
2SC5508-T2 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 968 |
2SC551 |
Industrial Transistor Specification Table |
TOSHIBA |
| 969 |
2SC552 |
Industrial Transistor Specification Table |
TOSHIBA |
| 970 |
2SC553 |
Industrial Transistor Specification Table |
TOSHIBA |
| 971 |
2SC5549 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH SPEED SWITCHING APPLICATION FOR INVERTER LIGHTING SYSTEM |
TOSHIBA |
| 972 |
2SC555 |
Industrial Transistor Specification Table |
TOSHIBA |
| 973 |
2SC556 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 974 |
2SC5580 |
Silicon NPN epitaxial planer type(For high-frequency oscillation / switching) |
Panasonic |
| 975 |
2SC5606 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
| 976 |
2SC5606-T1 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
| 977 |
2SC5620 |
For Low Frequency Amplify Application Sillcon Npn Epitaxial Type |
Isahaya Electronics Corporation |
| 978 |
2SC5621 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 979 |
2SC5636 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 980 |
2SC5658FHA |
NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 981 |
2SC5658FHAT2L |
NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 982 |
2SC5658T2L |
NPN General Purpose Amplification Transistor |
ROHM |
| 983 |
2SC5814 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 984 |
2SC5815 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 985 |
2SC5816 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 986 |
2SC5817 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 987 |
2SC5887 |
Low-Saturation Voltage Transistors |
SANYO |
| 988 |
2SC5888 |
Low-Saturation Voltage Transistors |
SANYO |
| 989 |
2SC5889 |
Low-Saturation Voltage Transistors |
SANYO |
| 990 |
2SC5915 |
Low-Saturation Voltage Transistors |
SANYO |
| | | |
