| No. |
Part Name |
Description |
Manufacturer |
| 841 |
2SC1908 |
SPECIFICATION TRANSISTOR,DIODES |
Unknow |
| 842 |
2SC199 |
Industrial Transistor Specification Table |
TOSHIBA |
| 843 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 844 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 845 |
2SC2352 |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
| 846 |
2SC2352 |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
| 847 |
2SC2353 |
Application Note - typical application for UHF TV tuner mixer |
NEC |
| 848 |
2SC2353 |
Application Note - typical application for UHF TV tuner mixer |
NEC |
| 849 |
2SC2353 |
Typical Application of 2SC2353 for UHF TV Tuner Mixer |
NEC |
| 850 |
2SC2412KT146 |
NPN General Purpose Amplification Transistor |
ROHM |
| 851 |
2SC2532 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications |
TOSHIBA |
| 852 |
2SC2570A |
High-Frequency Low Noise transistors for VHF-and UHF band application of 2SC2570A - Application Note |
NEC |
| 853 |
2SC2570A |
High-Frequency Low Noise transistors for VHF-and UHF band application of 2SC2570A - Application Note |
NEC |
| 854 |
2SC3052 |
LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 855 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
| 856 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
| 857 |
2SC3439 |
FOR SMALL TYPE MOTOR PLUNGER DRIVE APPLICATION SILCON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 858 |
2SC3440 |
HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 859 |
2SC3443 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 860 |
2SC3444 |
FOR LOW FREQUENCY POWER AMPLFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 861 |
2SC366G |
Industrial Transistor Specification Table |
TOSHIBA |
| 862 |
2SC367G |
Industrial Transistor Specification Table |
TOSHIBA |
| 863 |
2SC368 |
Industrial Transistor Specification Table |
TOSHIBA |
| 864 |
2SC369G |
Industrial Transistor Specification Table |
TOSHIBA |
| 865 |
2SC370 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 866 |
2SC371 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 867 |
2SC371G |
Industrial Transistor Specification Table |
TOSHIBA |
| 868 |
2SC372 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 869 |
2SC3728 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 870 |
2SC372G |
Industrial Transistor Specification Table |
TOSHIBA |
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