| No. |
Part Name |
Description |
Manufacturer |
| 811 |
2SB1493 |
For power amplification Complementary to 2SD2255 |
Panasonic |
| 812 |
2SB502 |
Industrial Transistor Specification Table |
TOSHIBA |
| 813 |
2SB503 |
Industrial Transistor Specification Table |
TOSHIBA |
| 814 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
| 815 |
2SB922 |
Low-Saturation Voltage Transistors |
SANYO |
| 816 |
2SC1001 |
Industrial Transistor Specification Table |
TOSHIBA |
| 817 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 818 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 819 |
2SC105 |
Industrial Transistor Specification Table |
TOSHIBA |
| 820 |
2SC1077 |
Industrial Transistor Specification Table |
TOSHIBA |
| 821 |
2SC108A |
Industrial Transistor Specification Table |
TOSHIBA |
| 822 |
2SC109A |
Industrial Transistor Specification Table |
TOSHIBA |
| 823 |
2SC1120 |
Industrial Transistor Specification Table |
TOSHIBA |
| 824 |
2SC1121 |
Industrial Transistor Specification Table |
TOSHIBA |
| 825 |
2SC1122 |
Industrial Transistor Specification Table |
TOSHIBA |
| 826 |
2SC1164 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 827 |
2SC1165 |
Industrial Transistor Specification Table |
TOSHIBA |
| 828 |
2SC1168 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 829 |
2SC1193 |
Industrial Transistor Specification Table |
TOSHIBA |
| 830 |
2SC1200 |
Industrial Transistor Specification Table |
TOSHIBA |
| 831 |
2SC1236 |
Industrial Transistor Specification Table |
TOSHIBA |
| 832 |
2SC1475 |
SPECIFICATION TRANSISTORS, DIODES |
Unknow |
| 833 |
2SC1622A-L |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 834 |
2SC1622A-T1B |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 835 |
2SC1622A-T2B |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 836 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
| 837 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
| 838 |
2SC1810 |
SPECIFICATION TRANSISTORS,DIODES |
SONY |
| 839 |
2SC1816 |
SPECIFICATION TRANSISTORSS,DIODES |
Unknow |
| 840 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
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