| No. |
Part Name |
Description |
Manufacturer |
| 691 |
2N5492 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 692 |
2N5494 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 693 |
2N5496 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 694 |
2N5596 |
Application Note - Match impedances in microwave amplifiers |
Motorola |
| 695 |
2N5919 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 696 |
2N5919 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 697 |
2N5942 |
Application Note - Broadband Linear Power Amplifiers using Push-Pull transistors |
Motorola |
| 698 |
2N5945 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 699 |
2N5946 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 700 |
2N6099 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 701 |
2N6101 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 702 |
2N6105 |
Hotspotting in RF Power Transistors - Application Note |
RCA Solid State |
| 703 |
2N6136 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 704 |
2N6439 |
Application Note - A 60W 225-400MHz amplifier |
Motorola |
| 705 |
2N7288D |
Radiation Hardened N-Channel Power MOSFETs |
Intersil |
| 706 |
2N7288H |
Radiation Hardened N-Channel Power MOSFETs |
Intersil |
| 707 |
2N7288R |
Radiation Hardened N-Channel Power MOSFETs |
Intersil |
| 708 |
2N917 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
| 709 |
2N918 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
| 710 |
2SA1037AKT146 |
PNP General Purpose Amplification Transistor |
ROHM |
| 711 |
2SA1282 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 712 |
2SA1282A |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 713 |
2SA1285 |
FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 714 |
2SA1285A |
FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 715 |
2SA1286 |
SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 716 |
2SA1287 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 717 |
2SA1298 |
Transistor Silicon PNP Epitaxial (PCT process) Low Frequency Power Amplifier Application Power Switching Applications |
TOSHIBA |
| 718 |
2SA1365 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 719 |
2SA1369 |
FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 720 |
2SA1514KFRA |
PNP General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| | | |
