No. |
Part Name |
Description |
Manufacturer |
631 |
2N1865 |
MADT® PNP germanium transistor communication types |
Sprague |
632 |
2N1866 |
MADT® PNP germanium transistor communication types |
Sprague |
633 |
2N1867 |
MADT® PNP germanium transistor communication types |
Sprague |
634 |
2N1868 |
MADT® PNP germanium transistor communication types |
Sprague |
635 |
2N1906 |
Germanium Diffused Collector PNP, typical application High Power Amplifier |
SGS-ATES |
636 |
2N1924 |
Germanium transistor, amplification and low speed switching |
COSEM |
637 |
2N1925 |
Germanium transistor, amplification and low speed switching |
COSEM |
638 |
2N1926 |
Germanium transistor, amplification and low speed switching |
COSEM |
639 |
2N2217 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
640 |
2N2218 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
641 |
2N2219 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
642 |
2N2220 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
643 |
2N2221 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
644 |
2N2222 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
645 |
2N2222B |
NPN Transistor Medium Power, low noise, high breakdown voltage, low saturation voltage |
Amelco Semiconductor |
646 |
2N2285 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
647 |
2N2286 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
648 |
2N2287 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
649 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
650 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
651 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
652 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
653 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
654 |
2N2357 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
655 |
2N2358 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
656 |
2N2359 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
657 |
2N2865 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
658 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
659 |
2N3055 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
660 |
2N3118 |
Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment |
RCA Solid State |
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