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Datasheets for ATION

Datasheets found :: 34890
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No. Part Name Description Manufacturer
631 2N1865 MADT® PNP germanium transistor communication types Sprague
632 2N1866 MADT® PNP germanium transistor communication types Sprague
633 2N1867 MADT® PNP germanium transistor communication types Sprague
634 2N1868 MADT® PNP germanium transistor communication types Sprague
635 2N1906 Germanium Diffused Collector PNP, typical application High Power Amplifier SGS-ATES
636 2N1924 Germanium transistor, amplification and low speed switching COSEM
637 2N1925 Germanium transistor, amplification and low speed switching COSEM
638 2N1926 Germanium transistor, amplification and low speed switching COSEM
639 2N2217 NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage Amelco Semiconductor
640 2N2218 NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage Amelco Semiconductor
641 2N2219 NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage Amelco Semiconductor
642 2N2220 NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage Amelco Semiconductor
643 2N2221 NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage Amelco Semiconductor
644 2N2222 NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage Amelco Semiconductor
645 2N2222B NPN Transistor Medium Power, low noise, high breakdown voltage, low saturation voltage Amelco Semiconductor
646 2N2285 PNP Germanium power transistor low satturation voltage, fast switching times Motorola
647 2N2286 PNP Germanium power transistor low satturation voltage, fast switching times Motorola
648 2N2287 PNP Germanium power transistor low satturation voltage, fast switching times Motorola
649 2N2322 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
650 2N2323 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
651 2N2324 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
652 2N2325 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
653 2N2326 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
654 2N2357 PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times Motorola
655 2N2358 PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times Motorola
656 2N2359 PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times Motorola
657 2N2865 Silicon NPN transistor, VHF-UHF amplification and oscillation SESCOSEM
658 2N3055 Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications ITT Semiconductors
659 2N3055 Power NPN silicon transistor, AF amplification and general purpose SESCOSEM
660 2N3118 Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment RCA Solid State


Datasheets found :: 34890
Page: | 18 | 19 | 20 | 21 | 22 | 23 | 24 | 25 | 26 |



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