| No. |
Part Name |
Description |
Manufacturer |
| 1051 |
2B454 |
VCSEL Laser Diode(Datacom) |
Mitel Semiconductor |
| 1052 |
2B455 |
VCSEL Laser Diode(Datacom) |
Mitel Semiconductor |
| 1053 |
2EZ100 |
100 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1054 |
2EZ110 |
110 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1055 |
2EZ120 |
120 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1056 |
2EZ130 |
130 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1057 |
2EZ140 |
140 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1058 |
2EZ150 |
150 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1059 |
2EZ160 |
160 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1060 |
2EZ170 |
170 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1061 |
2EZ180 |
180 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1062 |
2EZ190 |
190 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1063 |
2EZ200 |
200 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1064 |
2KBP005M |
50 V, 2 A, in-line glass passivated single phase rectifier bridge |
TRANSYS Electronics Limited |
| 1065 |
2N1025 |
Silicon Transistors |
Semitronics |
| 1066 |
2N1073 |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 40V |
Motorola |
| 1067 |
2N1073A |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 80V |
Motorola |
| 1068 |
2N1073B |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 120V |
Motorola |
| 1069 |
2N158 |
Germanium Power Transistors |
Semitronics |
| 1070 |
2N1600 |
Silicon Controlled Rectifiers |
Semitronics |
| 1071 |
2N1613 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 1072 |
2N1711 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1073 |
2N1893 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 1074 |
2N2079 |
Germanium Power Transistor |
Semitronics |
| 1075 |
2N2102 |
1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 1076 |
2N2218 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 1077 |
2N2218A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 1078 |
2N2219 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 1079 |
2N2219A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 1080 |
2N2221 |
0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| | | |
