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Datasheets for MIT

Datasheets found :: 63916
Page: | 36 | 37 | 38 | 39 | 40 | 41 | 42 | 43 | 44 |
No. Part Name Description Manufacturer
1171 2N4124 25 V, NPN small signal transistor TRANSYS Electronics Limited
1172 2N4124 General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1173 2N4125 Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1174 2N4126 25 V, PNP small signal transistor TRANSYS Electronics Limited
1175 2N4126 Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1176 2N4146 Thyristors and Triggers Semitronics
1177 2N4234 6.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
1178 2N4235 6.000W General Purpose PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
1179 2N4236 6.000W General Purpose PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
1180 2N4237 1.000W General Purpose NPN Metal Can Transistor. 40V Vceo, 1.000A Ic, 15 hFE. Continental Device India Limited
1181 2N4238 6.000W General Purpose NPN Metal Can Transistor. 60V Vceo, 1.000A Ic, 30 hFE. Continental Device India Limited
1182 2N4239 1.000W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 15 hFE. Continental Device India Limited
1183 2N4400 0.625W Switching NPN Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 20 hFE. Continental Device India Limited
1184 2N4400 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1185 2N4401 0.625W Switching NPN Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 40 hFE. Continental Device India Limited
1186 2N4401 TO-92 Plastic-Encapsulated Transistors TRANSYS Electronics Limited
1187 2N4401 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1188 2N4402 0.625W Switching PNP Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 20 hFE. Continental Device India Limited
1189 2N4402 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1190 2N4403 0.625W Switching PNP Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 20 hFE. Continental Device India Limited
1191 2N4403 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1192 2N4409 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.250A Ic, 60 - 400 hFE Continental Device India Limited
1193 2N4427 Transmitting transistor NPN mble
1194 2N4427 Silicon NPN planar epitaxial transistor for driver stages in 175 MHz and 470 MHz transmitters at 12 V supply voltage VALVO
1195 2N4923 30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 30 - 150 hFE. Continental Device India Limited
1196 2N4932 Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction RCA Solid State
1197 2N4933 Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction RCA Solid State
1198 2N5071 24W(CW), 76-MHz Emiter-Balasted Overlay RF Power Transistor RCA Solid State
1199 2N5086 0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 150 - hFE Continental Device India Limited
1200 2N5086 Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. USHA India LTD


Datasheets found :: 63916
Page: | 36 | 37 | 38 | 39 | 40 | 41 | 42 | 43 | 44 |



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