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Datasheets for MIT

Datasheets found :: 63916
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No. Part Name Description Manufacturer
1231 2N5551 0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE Continental Device India Limited
1232 2N5551 Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1233 2N5630 Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
1234 2N5631 Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
1235 2N5679 10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
1236 2N5680 10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
1237 2N5681 10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
1238 2N5682 10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
1239 2N5770 0.350W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.050A Ic, 50 - 200 hFE Continental Device India Limited
1240 2N5910 PN gallium arsenide phosphide visible red light-emitting diode Motorola
1241 2N5911 Panel Mount Light Emitting Diode visible green PN gallium phosphide Motorola
1242 2N5912 Panel mount light emitting diode visible yellow PN gallium phosphide Motorola
1243 2N5918 10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor RCA Solid State
1244 2N5919A 16W, 400-MHz, Silicon NPN Emitter-Ballasted Overlay Transistor RCA Solid State
1245 2N5920 2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor RCA Solid State
1246 2N5921 5W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
1247 2N6030 Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
1248 2N6031 Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
1249 2N6034 W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. Continental Device India Limited
1250 2N6036 40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 100 hFE. Continental Device India Limited
1251 2N6037 40.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 750 - 15000 hFE. Continental Device India Limited
1252 2N6038 40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 750 - 15000 hFE. Continental Device India Limited
1253 2N6039 W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. Continental Device India Limited
1254 2N6081 NPN transistor designed for VHF FM mobile and marine transmitters 12.5V 15W SGS Thomson Microelectronics
1255 2N6093 75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode RCA Solid State
1256 2N6101 75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE. Continental Device India Limited
1257 2N6104 30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor RCA Solid State
1258 2N6105 30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor RCA Solid State
1259 2N6107 40.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. Continental Device India Limited
1260 2N6109 40.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 30 - 150 hFE. Continental Device India Limited


Datasheets found :: 63916
Page: | 38 | 39 | 40 | 41 | 42 | 43 | 44 | 45 | 46 |



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