No. |
Part Name |
Description |
Manufacturer |
1231 |
2N5551 |
0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE |
Continental Device India Limited |
1232 |
2N5551 |
Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
1233 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
1234 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
1235 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
1236 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
1237 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
1238 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
1239 |
2N5770 |
0.350W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.050A Ic, 50 - 200 hFE |
Continental Device India Limited |
1240 |
2N5910 |
PN gallium arsenide phosphide visible red light-emitting diode |
Motorola |
1241 |
2N5911 |
Panel Mount Light Emitting Diode visible green PN gallium phosphide |
Motorola |
1242 |
2N5912 |
Panel mount light emitting diode visible yellow PN gallium phosphide |
Motorola |
1243 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
1244 |
2N5919A |
16W, 400-MHz, Silicon NPN Emitter-Ballasted Overlay Transistor |
RCA Solid State |
1245 |
2N5920 |
2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor |
RCA Solid State |
1246 |
2N5921 |
5W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
1247 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
1248 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
1249 |
2N6034 |
W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
Continental Device India Limited |
1250 |
2N6036 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 100 hFE. |
Continental Device India Limited |
1251 |
2N6037 |
40.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 750 - 15000 hFE. |
Continental Device India Limited |
1252 |
2N6038 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 750 - 15000 hFE. |
Continental Device India Limited |
1253 |
2N6039 |
W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
Continental Device India Limited |
1254 |
2N6081 |
NPN transistor designed for VHF FM mobile and marine transmitters 12.5V 15W |
SGS Thomson Microelectronics |
1255 |
2N6093 |
75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode |
RCA Solid State |
1256 |
2N6101 |
75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
1257 |
2N6104 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
1258 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
1259 |
2N6107 |
40.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. |
Continental Device India Limited |
1260 |
2N6109 |
40.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
| | | |