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Datasheets for MIT

Datasheets found :: 63916
Page: | 37 | 38 | 39 | 40 | 41 | 42 | 43 | 44 | 45 |
No. Part Name Description Manufacturer
1201 2N5087 0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - hFE Continental Device India Limited
1202 2N5087 Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
1203 2N5088 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE Continental Device India Limited
1204 2N5088 Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1205 2N5089 0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.050A Ic, 400 - 1200 hFE Continental Device India Limited
1206 2N5089 Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1207 2N5155 PNP Germanium power transistor, collector-emitter sustaining voltage capability Motorola
1208 2N5172 0.400W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.150A Ic, 100 - 500 hFE Continental Device India Limited
1209 2N5179 0.200W General Purpose NPN Metal Can Transistor. 12V Vceo, 0.050A Ic, 25 - 250 hFE. Continental Device India Limited
1210 2N5191 40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. Continental Device India Limited
1211 2N5192 40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 7 hFE. Continental Device India Limited
1212 2N5210 Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1213 2N5232 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE Continental Device India Limited
1214 2N5232A 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE Continental Device India Limited
1215 2N5294 36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. Continental Device India Limited
1216 2N5296 36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. Continental Device India Limited
1217 2N5298 36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. Continental Device India Limited
1218 2N5320 10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. Continental Device India Limited
1219 2N5321 10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. Continental Device India Limited
1220 2N5400 0.500W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.600A Ic, 40 - hFE Continental Device India Limited
1221 2N5400 Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1222 2N5401 0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE Continental Device India Limited
1223 2N5401 Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1224 2N5401AI 0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE Continental Device India Limited
1225 2N5401SAM 0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE Continental Device India Limited
1226 2N5415 1.000W General Purpose PNP Metal Can Transistor. 200V Vceo, 1.000A Ic, 30 - 150 hFE. Continental Device India Limited
1227 2N5416 1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. Continental Device India Limited
1228 2N5496 50.000W General Purpose NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 20 - 100 hFE Continental Device India Limited
1229 2N5550 0.500W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 0.600A Ic, 60 - hFE Continental Device India Limited
1230 2N5550 Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. USHA India LTD


Datasheets found :: 63916
Page: | 37 | 38 | 39 | 40 | 41 | 42 | 43 | 44 | 45 |



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