| No. |
Part Name |
Description |
Manufacturer |
| 1051 |
1S1658 |
Silicon epitaxial planar variable capacitance diode, FM AFC applications |
TOSHIBA |
| 1052 |
1S1832 |
Rectifier Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
TOSHIBA |
| 1053 |
1S1834 |
Rectifier Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
TOSHIBA |
| 1054 |
1S1835 |
Rectifier Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
TOSHIBA |
| 1055 |
1S1837 |
Silicon diffused junction rectifier, High Voltage Rectifier for Color Television Receivers Application (Doubler Circuits) |
TOSHIBA |
| 1056 |
1S1885 |
Rectifier Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
| 1057 |
1S1885A |
Rectifiers Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
| 1058 |
1S1886A |
RECTIFIER (CENERAL PURPOSE RECTIFIER APPLICATIONS) |
TOSHIBA |
| 1059 |
1S1887 |
Rectifier Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
| 1060 |
1S1887A |
Rectifiers Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
| 1061 |
1S1888 |
Rectifier Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
| 1062 |
1S1888A |
Rectifiers Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
| 1063 |
1S2091 |
Silicon epitaxial planar diode, Phase Detector Application for color TV |
TOSHIBA |
| 1064 |
1S2187 |
Silicon epitaxial schottky barrier mixer diode, UHF Mixer Application |
TOSHIBA |
| 1065 |
1S2460 |
GENERAL PURPOSE RECTIFIER APPLICATIONS. |
TOSHIBA |
| 1066 |
1S2461 |
GENERAL PURPOSE RECTIFIER APPLICATIONS. |
TOSHIBA |
| 1067 |
1S2462 |
GENERAL PURPOSE RECTIFIER APPLICATIONS. |
TOSHIBA |
| 1068 |
1S920 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 1069 |
1S921 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 1070 |
1S922 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 1071 |
1S923 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 1072 |
1SS154 |
Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications |
TOSHIBA |
| 1073 |
1SS181 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1074 |
1SS184 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1075 |
1SS187 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1076 |
1SS190 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1077 |
1SS193 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1078 |
1SS196 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1079 |
1SS200 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1080 |
1SS201 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
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