| No. |
Part Name |
Description |
Manufacturer |
| 1171 |
1SV308 |
Diode Silicon Epitaxial Pin Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 1172 |
1SV312 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 1173 |
1SV77 |
Application Note - Features and applications |
NEC |
| 1174 |
1SV77 |
Application Note - Features and applications |
NEC |
| 1175 |
1ZB200-Y |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
| 1176 |
1ZB200-Z |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
| 1177 |
1ZB220-Y |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
| 1178 |
1ZB220-Z |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
| 1179 |
1ZB240-Y |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
| 1180 |
1ZB240-Z |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
| 1181 |
2-5S |
Holder and applicable transistor (Package) |
TOSHIBA |
| 1182 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 1183 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 1184 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 1185 |
200FXG13 |
DIODE(HIGHSPEEDRECTIFIERAPPLICATIONS) |
TOSHIBA |
| 1186 |
200FXH13 |
DIODE(HIGHSPEEDRECTIFIERAPPLICATIONS) |
TOSHIBA |
| 1187 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 1188 |
2023-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 1189 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 1190 |
2023-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 1191 |
2023-6 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 1192 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 1193 |
20DL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1194 |
20DL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1195 |
20DL2C48A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1196 |
20DL2C48A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1197 |
20DL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1198 |
20DL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1199 |
20DL2CZ51A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1200 |
20DL2CZ51A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| | | |
