| No. |
Part Name |
Description |
Manufacturer |
| 1201 |
20FL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1202 |
20FL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1203 |
20FL2C48A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1204 |
20FL2C48A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1205 |
20FL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1206 |
20FL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1207 |
20FL2CZ51A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1208 |
20FL2CZ51A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1209 |
20FWJ2C48M |
SCHOTTKY BARRIER RECTIFIER STACK SWITCHING MODE POWER SUPPLY, CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1210 |
20FWJ2CZ47M |
SCHOTTKY BARRIER RECTIFIER STACK SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1211 |
20FWJ2CZ47M |
SCHOTTKY BARRIER RECTIFIER STACK SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1212 |
20GL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1213 |
20GL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1214 |
20JL2C41 |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1215 |
20JL2C41 |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1216 |
20JL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1217 |
20JL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1218 |
20RIF100W |
V(rrm): 1000V; 20A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
| 1219 |
20RIF120W |
V(rrm): 1200V; 20A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
| 1220 |
20U6P45 |
RECTIFIERMODULE(THREEPHASEFULLWAVEBRIDGEAPPLICATIONS) |
TOSHIBA |
| 1221 |
21050 |
21050 PCI-to-PCI Bridge Hardware Implementation Application Note |
Intel |
| 1222 |
2114BF |
Hybrid Circuit SWITCH used for high level multiplexing, A/D conversion, telemetry, and chopper applications |
Amelco Semiconductor |
| 1223 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 1224 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 1225 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 1226 |
2301 |
2.3GHz 1W 22V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 1227 |
2304 |
2.3GHz 4W 20V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 1228 |
2327-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 1229 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 1230 |
2327-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
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