| No. |
Part Name |
Description |
Manufacturer |
| 1051 |
2SA502 |
Silicon PNP epitaxial planar transistor, fluorescent numerical indicator tube drive applications |
TOSHIBA |
| 1052 |
2SA509 |
Silicon PNP epitaxial planar medium power transistor, complementary to 2SC509 |
TOSHIBA |
| 1053 |
2SA509G |
Silicon PNP epitaxial planar medium power transistor, complementary to 2SC509G |
TOSHIBA |
| 1054 |
2SA52 |
Germanium PNP alloy junction transistor, AM Frequency Converter Applications |
TOSHIBA |
| 1055 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 1056 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 1057 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 1058 |
2SA549AH |
Silicon PNP Triple Diffused Planar Transistor, intended for use in High Speed Switching, Indicater Tube Driver |
Hitachi Semiconductor |
| 1059 |
2SA561 |
Silicon PNP epitaxial planar transistor, complementary to 2SC734 |
TOSHIBA |
| 1060 |
2SA565 |
Silicon PNP Epitaxial Planar Transistor, intended for use in HiFi AMP. Driver, Power Output |
Hitachi Semiconductor |
| 1061 |
2SA566 |
Silicon PNP Epitaxial Planar Transistor, intended for use in HiFi AMP. Driver, Power Output |
Hitachi Semiconductor |
| 1062 |
2SA661 |
Silicon PNP epitaxial planar transistor, complementary to 2SC1166 |
TOSHIBA |
| 1063 |
2SA812R |
PNP silicon epitaxial transistor, audio frequency |
NEC |
| 1064 |
2SA940 |
Silicon PNP triple diffused power transistor, complementary to 2SC2073 |
TOSHIBA |
| 1065 |
2SA962A |
Silicon PNP epitaxial power transistor, complementary 2SC2194A |
TOSHIBA |
| 1066 |
2SA968 |
Silicon PNP epitaxial power transistor, complementary 2SC2238 |
TOSHIBA |
| 1067 |
2SA969A |
Silicon PNP epitaxial power transistor, complementary 2SC2238A |
TOSHIBA |
| 1068 |
2SB1035 |
900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447 |
Isahaya Electronics Corporation |
| 1069 |
2SB1122 |
Bipolar Transistor, -50V, -1A, Low VCE(sat) PNP Single PCP |
ON Semiconductor |
| 1070 |
2SB1204 |
Bipolar Transistor, -50V, -8A, Low VCE(sat), PNP Single TP/TP-FA |
ON Semiconductor |
| 1071 |
2SB1229 |
Bipolar Transistor, 50V, 2A, Low VCE(sat), NPN Single NP |
ON Semiconductor |
| 1072 |
2SB1302 |
Bipolar Transistor, -20V, -5A, Low VCE(sat) PNP Single PCP |
ON Semiconductor |
| 1073 |
2SB1314 |
2W Lead frame PNP transistor, maximum rating: -60V Vceo, -3A Ic, 150 to 500 hFE. |
Isahaya Electronics Corporation |
| 1074 |
2SB189 |
Germanium PNP alloy junction transistor, audio medium power amplifier applications |
TOSHIBA |
| 1075 |
2SB331H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 1076 |
2SB332H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 1077 |
2SB333H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 1078 |
2SB334H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 1079 |
2SB337 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 1080 |
2SB337H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
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