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Datasheets for RANSISTOR,

Datasheets found :: 3197
Page: | 36 | 37 | 38 | 39 | 40 | 41 | 42 | 43 | 44 |
No. Part Name Description Manufacturer
1171 2SC2481 Silicon NPN epitaxial transistor, color TV vert. deflection, class B sound output applications TOSHIBA
1172 2SC2483 Silicon NPN epitaxial high-voltage transistor, complementary to 2SA1195 TOSHIBA
1173 2SC2484 Silicon NPN epitaxial base mesa transistor, 80V, 5A Panasonic
1174 2SC2509 Silicon NPN epitaxial planar transistor, 2-30MH SSB linear power amplifier applications TOSHIBA
1175 2SC2531 Silicon NPN epitaxial planar transistor, 2-30MH SSB linear power amplifier applications 28V supply voltage use TOSHIBA
1176 2SC2564 Silicon NPN epitaxial power transistor, complementary to 2SA1094 TOSHIBA
1177 2SC2565 Silicon NPN epitaxial power transistor, complementary to 2SA1095 TOSHIBA
1178 2SC2704 Silicon NPN epitaxial audio frequency transistor, complementary to 2SA1144 TOSHIBA
1179 2SC2706 Silicon NPN epitaxial audio frequency power transistor, complementary to 2SA1146 TOSHIBA
1180 2SC2756 NPN silicon epitaxial transistor, VHF mixer NEC
1181 2SC2756R NPN silicon epitaxial transistor, VHF mixer NEC
1182 2SC280H Silicon NPN Epitaxial LTP Twin Transistor, intended for use in DC Amplifier Hitachi Semiconductor
1183 2SC281H Silicon NPN Epitaxial LTP Transistor, intended for use in Audio Frequency Small Signal Amplifier Hitachi Semiconductor
1184 2SC283H Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier Hitachi Semiconductor
1185 2SC3053 150mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. correspond 2SC710 Isahaya Electronics Corporation
1186 2SC313 Silicon NPN Epitaxial Planar Transistor, intended for use in UHF Tuner Local Oscillator Hitachi Semiconductor
1187 2SC313H Silicon NPN Epitaxial Planar Transistor, intended for use in UHF Tuner Local Oscillator Hitachi Semiconductor
1188 2SC321H Silicon NPN Epitaxial Planar Transistor, intended for use in High Speed Switching Hitachi Semiconductor
1189 2SC3242 900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282 Isahaya Electronics Corporation
1190 2SC3242A 900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A Isahaya Electronics Corporation
1191 2SC3243 900mW Lead frame NPN transistor, maximum rating: 60V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SA1283 Isahaya Electronics Corporation
1192 2SC3244 900mW Lead frame NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1284 Isahaya Electronics Corporation
1193 2SC3245 900mW Lead frame NPN transistor, maximum rating: 120V Vceo, 100mA Ic, 150 to 800 hFE. Complementary 2SA1285 Isahaya Electronics Corporation
1194 2SC3245A 900mW Lead frame NPN transistor, maximum rating: 150V Vceo, 100mA Ic, 150 to 500 hFE. Complementary 2SA1285A Isahaya Electronics Corporation
1195 2SC3246 900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1.5A Ic, 400 to 3000 hFE. Complementary 2SA1286 Isahaya Electronics Corporation
1196 2SC3297 Silicon NPN epitaxial power transistor, car radio, car stereo output stage amplifier applications TOSHIBA
1197 2SC3335 Silicon NPN triple diffused high voltage switching transistor, Color TV chroma output applications TOSHIBA
1198 2SC3438 500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368 Isahaya Electronics Corporation
1199 2SC3580 900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 700mA Ic, 150 to 800 hFE. Complementary 2SA1398 Isahaya Electronics Corporation
1200 2SC3581 900mW Lead frame NPN transistor, maximum rating: 50V Vceo, 400mA Ic, 90 to 500 hFE. Complementary 2SA1399 Isahaya Electronics Corporation


Datasheets found :: 3197
Page: | 36 | 37 | 38 | 39 | 40 | 41 | 42 | 43 | 44 |



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