No. |
Part Name |
Description |
Manufacturer |
10561 |
TC514410J-10 |
100 ns, 4-bit generation dynamic RAM |
TOSHIBA |
10562 |
TC514410J-80 |
80 ns, 4-bit generation dynamic RAM |
TOSHIBA |
10563 |
TC514410Z-10 |
100 ns, 4-bit generation dynamic RAM |
TOSHIBA |
10564 |
TC514410Z-80 |
80 ns, 4-bit generation dynamic RAM |
TOSHIBA |
10565 |
TC51832 |
Silicon Gate CMOS / 32768 word x 8 Bit CMOS Pseudo Static RAM |
TOSHIBA |
10566 |
TC51832F-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
10567 |
TC51832F-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
10568 |
TC51832F-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
10569 |
TC51832FL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
10570 |
TC51832FL-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
10571 |
TC51832FL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
10572 |
TC51832P-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
10573 |
TC51832P-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
10574 |
TC51832P-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
10575 |
TC51832PL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
10576 |
TC51832PL-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
10577 |
TC51832PL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
10578 |
TC51832SP-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
10579 |
TC51832SP-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
10580 |
TC51832SP-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
10581 |
TC51832SPL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
10582 |
TC51832SPL-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
10583 |
TC51832SPL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
10584 |
TC51WHM516AXBN |
SRAM - Pseudo SRAM |
TOSHIBA |
10585 |
TC51WHM516AXBN65 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
10586 |
TC51WHM516AXBN70 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
10587 |
TC51WHM516AXGN65 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
10588 |
TC51WHM516AXGN70 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
10589 |
TC51WHM616AXBN |
SRAM - Pseudo SRAM |
TOSHIBA |
10590 |
TC51WHM616AXBN65 |
4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
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