No. |
Part Name |
Description |
Manufacturer |
10591 |
TC51WHM616AXBN70 |
4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
10592 |
TC51WKM516AXBN |
SRAM - Pseudo SRAM |
TOSHIBA |
10593 |
TC51WKM516AXBN75 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
10594 |
TC51WKM516AXGN65 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
10595 |
TC51WKM516AXGN70 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
10596 |
TC51WKM616AXBN |
SRAM - Pseudo SRAM |
TOSHIBA |
10597 |
TC51WKM616AXBN75 |
4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
10598 |
TC528128BJ-10 |
100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
10599 |
TC528128BJ-80 |
80ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
10600 |
TC528128BZ-10 |
100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
10601 |
TC528128BZ-80 |
80ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
10602 |
TC528267 |
262144 Words x 8 Bits Multiport DRAM |
TOSHIBA |
10603 |
TC531001CF |
150ns; V(dd): -0.5 to +7V; 1M bit (128K word x 8 bit) CMOS MASK ROM |
TOSHIBA |
10604 |
TC531001CP |
120ns; V(dd): -0.5 to +7V; 1M bit (128K word x 8 bit) CMOS MASK ROM |
TOSHIBA |
10605 |
TC531024F-12 |
120ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM |
TOSHIBA |
10606 |
TC531024F-15 |
150ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM |
TOSHIBA |
10607 |
TC531024P-12 |
120ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM |
TOSHIBA |
10608 |
TC531024P-15 |
150ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM |
TOSHIBA |
10609 |
TC54256AF |
32768 word x 8-bit CMOC one time programmable read only memory, 200ns |
TOSHIBA |
10610 |
TC54256AP |
32768 word x 8-bit CMOC one time programmable read only memory, 200ns |
TOSHIBA |
10611 |
TC54H1024F-10 |
100 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
10612 |
TC54H1024F-85 |
85 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
10613 |
TC54H1024P-10 |
100 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
10614 |
TC54H1024P-85 |
85 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
10615 |
TC5504A |
4096 word x 1 Bit CMOS Static RAM |
TOSHIBA |
10616 |
TC551001 |
SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM |
TOSHIBA |
10617 |
TC551001 |
131,072 WORD x 8 BIT STATIC RAM |
TOSHIBA |
10618 |
TC551001 |
131,072 WORD x 8 BIT STATIC RAM |
TOSHIBA |
10619 |
TC551001BFL-70L |
SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM |
TOSHIBA |
10620 |
TC551001BFL-85L |
SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM |
TOSHIBA |
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