| No. |
Part Name |
Description |
Manufacturer |
| 10711 |
BFP280W |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 10712 |
BFP420 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain amplifiers |
Infineon |
| 10713 |
BFP420 |
NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) |
Siemens |
| 10714 |
BFP420F |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain amplifiers in NEW thin small flatlead package TSFP-4 |
Infineon |
| 10715 |
BFP450 |
RF-Bipolar - NPN Silicon RF transistor for medium power amplifiers |
Infineon |
| 10716 |
BFP450 |
NPN Silicon RF Transistor (For medium power amplifiers) |
Siemens |
| 10717 |
BFP520 |
RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain amplifiers |
Infineon |
| 10718 |
BFP520 |
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
Siemens |
| 10719 |
BFP520F |
RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain amplifiers in NEW thin small flatlead package TSFP-4 |
Infineon |
| 10720 |
BFP540 |
RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain amplifiers |
Infineon |
| 10721 |
BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA |
Infineon |
| 10722 |
BFP81 |
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.) |
Siemens |
| 10723 |
BFP93 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
| 10724 |
BFP93A |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
| 10725 |
BFQ10 |
Field effect transistor, differential amplifiers |
mble |
| 10726 |
BFQ11 |
Field effect transistor, differential amplifiers |
mble |
| 10727 |
BFQ12 |
Field effect transistor, differential amplifiers |
mble |
| 10728 |
BFQ13 |
Field effect transistor, differential amplifiers |
mble |
| 10729 |
BFQ14 |
Field effect transistor, differential amplifiers |
mble |
| 10730 |
BFQ15 |
Field effect transistor, differential amplifiers |
mble |
| 10731 |
BFQ16 |
Field effect transistor, differential amplifiers |
mble |
| 10732 |
BFQ193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 10733 |
BFQ193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 10734 |
BFQ19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 10735 |
BFQ19S |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and) |
Siemens |
| 10736 |
BFQ22S |
Silicon Planar Epitaxial NPN transistor, intended for use in UHF and microwave aerial amplifiers, radar systems, oscilloscopes, spectrum analyses, etc. |
Philips |
| 10737 |
BFQ23 |
Silicon wideband PNP transistor, intended for use in UHF and microwave amplifiers, low intermodulation distorsion and high power gain |
Philips |
| 10738 |
BFQ29 |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) |
Siemens |
| 10739 |
BFQ29P |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) |
Siemens |
| 10740 |
BFQ34T |
Silicon planar epitaxial NPN transistor, intended for wideband amplification applications |
Philips |
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