| No. |
Part Name |
Description |
Manufacturer |
| 10801 |
BFR30LT1-D |
JFET Amplifiers N-Channel |
ON Semiconductor |
| 10802 |
BFR31LT1 |
JFET Amplifiers(N-Channel) |
Motorola |
| 10803 |
BFR340F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Noise Amplifiers and Oscillators |
Infineon |
| 10804 |
BFR340L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 10805 |
BFR340T |
RF-Bipolar - NPN Silicon RF transistor in SC75 package ideal for Low Noise Amplifiers and Oscillators |
Infineon |
| 10806 |
BFR34A |
NPN transistor for low noise RF amplifier applications |
Siemens |
| 10807 |
BFR34A |
NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS |
Siemens |
| 10808 |
BFR34R |
NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS |
Siemens |
| 10809 |
BFR35 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA) |
Siemens |
| 10810 |
BFR35A |
NPN transistor for low noise RF amplifiers and fast switching applications, marking GB |
Siemens |
| 10811 |
BFR35A |
NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS AND HIGH-SPEED SWITCHING APPLICATIONS |
Siemens |
| 10812 |
BFR35AP |
RF-Bipolar - NPN Silicon RF transistor for low distortion broadband amplifiers/oscillators |
Infineon |
| 10813 |
BFR35AP |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA) |
Siemens |
| 10814 |
BFR35AR |
NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS AND HIGH-SPEED SWITCHING APPLICATIONS |
Siemens |
| 10815 |
BFR36 |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
| 10816 |
BFR36 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 10817 |
BFR36A |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
| 10818 |
BFR37 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 10819 |
BFR38 |
Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz |
SGS-ATES |
| 10820 |
BFR38 |
Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz |
SGS-ATES |
| 10821 |
BFR38 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 10822 |
BFR460L3E6327 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 10823 |
BFR49 |
NPN silicon microwave transistor, suitable for amplifiers up to S-band frequencies |
Philips |
| 10824 |
BFR90 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 10825 |
BFR90A |
NPN silicon planar epitaxial transistor intended for use in VHF and UHF wideband amplifiers |
Philips |
| 10826 |
BFR91 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. |
Philips |
| 10827 |
BFR91 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. |
Philips |
| 10828 |
BFR91 |
Epitaxial planar NPN transistor, designed for VHF-UHF medium level amplifier up to 1.5GHz |
SGS-ATES |
| 10829 |
BFR91 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 10830 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
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