No. |
Part Name |
Description |
Manufacturer |
10741 |
BF36931 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
10742 |
BF36933 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
10743 |
BF37931E |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
10744 |
BF37933 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
10745 |
BF38931 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
10746 |
BF38933 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
10747 |
BF39931 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
10748 |
BF39933 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
10749 |
BF40931 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
10750 |
BF41931 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
10751 |
BF420A |
Silicon NPN Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
10752 |
BF421A |
Silicon PNP Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
10753 |
BF422A |
Silicon NPN Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
10754 |
BF423A |
Silicon PNP Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
10755 |
BF479S |
Epitaxial planar PNP transistor, intended for high current UHF-VHF stages of TV tuners |
SGS-ATES |
10756 |
BF543 |
Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
Siemens |
10757 |
BF550 |
PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) |
Siemens |
10758 |
BF569 |
PNP Silicon RF Transistor (fOR OSCILLATORS, MIXERS AND SELF-OSCILLATING MIXER STAGES IN uhf tv TUNERS) |
Siemens |
10759 |
BF569W |
PNP Silicon RF Transistor (For oscillators, mixer and self-oscillating mixer stages in UHF TV-tuner) |
Siemens |
10760 |
BF622 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
10761 |
BF623 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
10762 |
BF720 |
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
10763 |
BF720 |
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
10764 |
BF721 |
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
10765 |
BF721 |
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
10766 |
BF722 |
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
10767 |
BF722 |
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
10768 |
BF723 |
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
10769 |
BF723 |
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
10770 |
BF987 |
SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
Siemens |
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