| No. |
Part Name |
Description |
Manufacturer |
| 10801 |
BFR360L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Oscillators and VCO Modules up to 4GHz |
Infineon |
| 10802 |
BFR92P |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
| 10803 |
BFR92W |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
| 10804 |
BFS22 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 10805 |
BFS23 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz transmitters at 28 V supply voltage |
VALVO |
| 10806 |
BFS360L6 |
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz |
Infineon |
| 10807 |
BFS380L6 |
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package for LNA and VCO Modules up to 4GHz |
Infineon |
| 10808 |
BFS386L6 |
RF-Bipolar - NPN Silicon TWIN mixed type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz |
Infineon |
| 10809 |
BFS50 |
Silicon NPN epitaxial planar transistor for VHF/UHF power stages, oscillators and driver stages for low supply voltage |
AEG-TELEFUNKEN |
| 10810 |
BFX55 |
NPN SILICON TRANSISTOR FOR VHF OUTPUT STAGES IN BROADBAND AMPLIFIERS |
Siemens |
| 10811 |
BFX59 |
NPN transistor for driver and output stages in antenna amplifiers |
Siemens |
| 10812 |
BFX59F |
NPN transistor for driver and output stages in antenna amplifiers |
Siemens |
| 10813 |
BFX62 |
NPN transistor for controllable amplifiers and oscillator stages up to 1HGz |
Siemens |
| 10814 |
BFX94A |
Fast and ultra fast switches transistor |
SGS-ATES |
| 10815 |
BFX95A |
Fast and ultra fast switches transistor |
SGS-ATES |
| 10816 |
BFX96A |
Fast and ultra fast switches transistor |
SGS-ATES |
| 10817 |
BFX97A |
Fast and ultra fast switches transistor |
SGS-ATES |
| 10818 |
BFY88 |
Silicon NPN epitaxial planar RF transistor designed for use in UHF amplifier stages, emitter grounded input stages and oscillating mixer stages |
AEG-TELEFUNKEN |
| 10819 |
BGA619 |
Latest Silicon Discretes - High IP3 PCS LNA |
Infineon |
| 10820 |
BGA622L7 |
Infineon Technologies Introduces Fully Integrated SiGe LNA for GPS, WLAN, UMTS and further Mobile Applications |
Infineon |
| 10821 |
BGA622L7 |
Infineon Technologies Introduces Fully Integrated SiGe LNA for GPS, WLAN, UMTS and further Mobile Applications |
Infineon |
| 10822 |
BGD102 |
CATV power-doubler amplifier module 18.5dB gain operating at frequencies up to 450MHz |
Philips |
| 10823 |
BGD102E |
CATV power-doubler amplifier module 18.5dB gain operating at frequencies up to 450MHz |
Philips |
| 10824 |
BGD104E |
CATV power-doubler amplifier module 20.0dB gain operating at frequencies up to 450MHz |
Philips |
| 10825 |
BGX400 |
General Purpose Diodes - Silicon Switching Diode halfbridge rectifier |
Infineon |
| 10826 |
BGX50A |
General Purpose Diodes - Silicon Switching Diode Array with bridge configuration |
Infineon |
| 10827 |
BGY12 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 10828 |
BGY12A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 10829 |
BGY12B |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 10830 |
BGY13 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
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