| No. |
Part Name |
Description |
Manufacturer |
| 10741 |
BFQ10 |
Field effect transistor, differential amplifiers |
mble |
| 10742 |
BFQ11 |
Field effect transistor, differential amplifiers |
mble |
| 10743 |
BFQ12 |
Field effect transistor, differential amplifiers |
mble |
| 10744 |
BFQ13 |
Field effect transistor, differential amplifiers |
mble |
| 10745 |
BFQ14 |
Field effect transistor, differential amplifiers |
mble |
| 10746 |
BFQ15 |
Field effect transistor, differential amplifiers |
mble |
| 10747 |
BFQ16 |
Field effect transistor, differential amplifiers |
mble |
| 10748 |
BFQ193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 10749 |
BFQ193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 10750 |
BFQ19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 10751 |
BFQ19S |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and) |
Siemens |
| 10752 |
BFQ22S |
Silicon Planar Epitaxial NPN transistor, intended for use in UHF and microwave aerial amplifiers, radar systems, oscilloscopes, spectrum analyses, etc. |
Philips |
| 10753 |
BFQ23 |
Silicon wideband PNP transistor, intended for use in UHF and microwave amplifiers, low intermodulation distorsion and high power gain |
Philips |
| 10754 |
BFQ29 |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) |
Siemens |
| 10755 |
BFQ29P |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) |
Siemens |
| 10756 |
BFQ34T |
Silicon planar epitaxial NPN transistor, intended for wideband amplification applications |
Philips |
| 10757 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
| 10758 |
BFQ52 |
PNP silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFQ53 |
Philips |
| 10759 |
BFQ53 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, PNP complement is BFQ52 |
Philips |
| 10760 |
BFQ63 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers |
Philips |
| 10761 |
BFQ70 |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) |
Siemens |
| 10762 |
BFQ71 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.) |
Siemens |
| 10763 |
BFQ72 |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.) |
Siemens |
| 10764 |
BFQ73 |
NPN SILICON RF TRANSISTOR (FOR LOW-NOISE/ LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz) |
Siemens |
| 10765 |
BFQ73S |
NPN SILICON RF TRANSISTOR (FOR LOW-NOISE, LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz) |
Siemens |
| 10766 |
BFQ74 |
NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications) |
Siemens |
| 10767 |
BFQ75 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA.) |
Siemens |
| 10768 |
BFQ76 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents up to 20 mA.) |
Siemens |
| 10769 |
BFQ81 |
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications) |
Siemens |
| 10770 |
BFQ82 |
NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.) |
Siemens |
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