| No. |
Part Name |
Description |
Manufacturer |
| 10861 |
BFR96 |
NPN silicon planar epitaxial transistor intended for use in UHF and microwave amplifiers |
Philips |
| 10862 |
BFR96 |
Epitaxial planar NPN transistor for VHF-UHF high level amplifier |
SGS-ATES |
| 10863 |
BFR96 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 10864 |
BFR96H |
Epitaxial planar NPN transistor for VHF-UHF high level amplifier |
SGS-ATES |
| 10865 |
BFR97 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 10866 |
BFR98 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 10867 |
BFR98 |
VHF OSCILLATOR POWER AMPLIFIER |
ST Microelectronics |
| 10868 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 10869 |
BFR99 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 10870 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 10871 |
BFS17P |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers |
Infineon |
| 10872 |
BFS17P |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
| 10873 |
BFS17S |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFS17W) for broadband amplifiers |
Infineon |
| 10874 |
BFS17S |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
| 10875 |
BFS17W |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
| 10876 |
BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA |
Infineon |
| 10877 |
BFS21 |
Field effect transistor, differential amplifiers |
mble |
| 10878 |
BFS21A |
Field effect transistor, differential amplifiers |
mble |
| 10879 |
BFS460L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 10880 |
BFS466L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 10881 |
BFS469L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 10882 |
BFS480 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR180W) for low noise, low power amplifiers |
Infineon |
| 10883 |
BFS480 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 10884 |
BFS481 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR181W) for low noise, high gain broadband amplifiers |
Infineon |
| 10885 |
BFS481 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA) |
Siemens |
| 10886 |
BFS482 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) |
Siemens |
| 10887 |
BFS483 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR183W) for low noise, high gain broadband amplifiers |
Infineon |
| 10888 |
BFS483 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) |
Siemens |
| 10889 |
BFS86 |
Silicon NPN epitaxial planar transistor for VHF/UHF power stages, oscillators and driver stages. Especially for aerial amplifier circuits |
AEG-TELEFUNKEN |
| 10890 |
BFT24 |
NPN transistor, intended for use in UHF low power amplifiers such as in pocket phones, paging systems, etc. |
Philips |
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