| No. |
Part Name |
Description |
Manufacturer |
| 10801 |
GS-COMBI/E1-I |
ISDN NT1 POWER MANAGEMENT MODULE |
SGS Thomson Microelectronics |
| 10802 |
GS-COMBI/E1-I |
ISDN NT1 POWER MANAGEMENT MODULE |
ST Microelectronics |
| 10803 |
GS-COMBI/F3 |
ISDN NT1 POWER MANAGEMENT MODULE |
ST Microelectronics |
| 10804 |
GS-COMBI/F3-3.3 |
ISDN NT1 POWER MANAGEMENT MODULE |
ST Microelectronics |
| 10805 |
GS-NT1+/AME2 |
ISDN NT1 PLUS POWER MANAGEMENT MODULE |
SGS Thomson Microelectronics |
| 10806 |
GS-NT1+/AME2 |
ISDN NT1 PLUS POWER MANAGEMENT MODULE |
ST Microelectronics |
| 10807 |
GS-NT1+/INF2 |
ISDN NT1 PLUS POWER MANAGEMENT MODULE |
SGS Thomson Microelectronics |
| 10808 |
GS-NT1+/INF2 |
ISDN NT1 PLUS POWER MANAGEMENT MODULE |
ST Microelectronics |
| 10809 |
GS-NT1+/UR2 |
ISDN NT1 PLUS POWER MANAGEMENT MODULE |
SGS Thomson Microelectronics |
| 10810 |
GS-NT1+/UR2 |
ISDN NT1 PLUS POWER MANAGEMENT MODULE |
ST Microelectronics |
| 10811 |
GS-NT1P/DF3 |
ISDN NT1 PLUS POWER MANAGEMENT MODULE |
ST Microelectronics |
| 10812 |
GT100 |
Silicon NPN Very High Power Darlington Transistor |
IPRS Baneasa |
| 10813 |
GT100/10 |
Silicon NPN Very High Power Darlington Transistor 1000V |
IPRS Baneasa |
| 10814 |
GT100/3 |
Silicon NPN Very High Power Darlington Transistor 300V |
IPRS Baneasa |
| 10815 |
GT100/4 |
Silicon NPN Very High Power Darlington Transistor 400V |
IPRS Baneasa |
| 10816 |
GT100/5 |
Silicon NPN Very High Power Darlington Transistor 500V |
IPRS Baneasa |
| 10817 |
GT100/6 |
Silicon NPN Very High Power Darlington Transistor 600V |
IPRS Baneasa |
| 10818 |
GT100/7 |
Silicon NPN Very High Power Darlington Transistor 700V |
IPRS Baneasa |
| 10819 |
GT100/8 |
Silicon NPN Very High Power Darlington Transistor 800V |
IPRS Baneasa |
| 10820 |
GT100/9 |
Silicon NPN Very High Power Darlington Transistor 900V |
IPRS Baneasa |
| 10821 |
GT10J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10822 |
GT10J303 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10823 |
GT10J311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10824 |
GT10J312 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10825 |
GT10J312(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10826 |
GT10J321 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT |
TOSHIBA |
| 10827 |
GT10Q101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 10828 |
GT10Q301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 10829 |
GT150 |
Silicon NPN Very High Power Darlington Transistor |
IPRS Baneasa |
| 10830 |
GT150/10 |
Silicon NPN Very High Power Darlington Transistor 1000V |
IPRS Baneasa |
| | | |
