| No. |
Part Name |
Description |
Manufacturer |
| 10861 |
GT20J321 |
Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 10862 |
GT250 |
Silicon NPN Very High Power Darlington Transistor |
IPRS Baneasa |
| 10863 |
GT250/10 |
Silicon NPN Very High Power Darlington Transistor 1000V |
IPRS Baneasa |
| 10864 |
GT250/3 |
Silicon NPN Very High Power Darlington Transistor 300V |
IPRS Baneasa |
| 10865 |
GT250/4 |
Silicon NPN Very High Power Darlington Transistor 400V |
IPRS Baneasa |
| 10866 |
GT250/5 |
Silicon NPN Very High Power Darlington Transistor 500V |
IPRS Baneasa |
| 10867 |
GT250/6 |
Silicon NPN Very High Power Darlington Transistor 600V |
IPRS Baneasa |
| 10868 |
GT250/7 |
Silicon NPN Very High Power Darlington Transistor 700V |
IPRS Baneasa |
| 10869 |
GT250/8 |
Silicon NPN Very High Power Darlington Transistor 800V |
IPRS Baneasa |
| 10870 |
GT250/9 |
Silicon NPN Very High Power Darlington Transistor 900V |
IPRS Baneasa |
| 10871 |
GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 10872 |
GT25G101(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 10873 |
GT25G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 10874 |
GT25G102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 10875 |
GT25J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 10876 |
GT25J102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 10877 |
GT25Q101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 10878 |
GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 10879 |
GT25Q301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 10880 |
GT30J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 10881 |
GT30J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 10882 |
GT30J301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 10883 |
GT30J311 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 10884 |
GT30J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS |
TOSHIBA |
| 10885 |
GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 10886 |
GT400 |
Silicon NPN Very High Power Darlington Transistor |
IPRS Baneasa |
| 10887 |
GT400/10 |
Silicon NPN Very High Power Darlington Transistor 1000V |
IPRS Baneasa |
| 10888 |
GT400/3 |
Silicon NPN Very High Power Darlington Transistor 300V |
IPRS Baneasa |
| 10889 |
GT400/4 |
Silicon NPN Very High Power Darlington Transistor 400V |
IPRS Baneasa |
| 10890 |
GT400/5 |
Silicon NPN Very High Power Darlington Transistor 500V |
IPRS Baneasa |
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