| No. |
Part Name |
Description |
Manufacturer |
| 1081 |
2SD1586 |
Audio Frequency Power Amplifier |
Unknow |
| 1082 |
2SD1589 |
Audio Frequency Power Amplifier and Low Speed Switching Industrial Use |
Unknow |
| 1083 |
2SD1590 |
Audio Frequency Power Amplifier and Low Speed Switching Industrial Use |
Unknow |
| 1084 |
2SD1591 |
Audio Frequency Power Amplifier and Low Speed High Current Switching Industrial Use |
Unknow |
| 1085 |
2SD1593 |
Audio Frequency Amplifier Industrial Use |
Unknow |
| 1086 |
2SD1595 |
Audio Frequency Power Amplifier and Low Speed Switching Industrial Use |
Unknow |
| 1087 |
2SD1603 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENT PAIR WITH 2SB1103 AND 2SB1104 |
Hitachi Semiconductor |
| 1088 |
2SD1604 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENT PAIR WITH 2SB1103 AND 2SB1104 |
Hitachi Semiconductor |
| 1089 |
2SD1616 |
Transistor for audio frequency power amplifier |
USHA India LTD |
| 1090 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
| 1091 |
2SD1684 |
Low Frequency Amplifier |
ON Semiconductor |
| 1092 |
2SD191 |
Low Frequency Small-Signal Transistor |
TOSHIBA |
| 1093 |
2SD1912 |
LOW FREQUENCY POWER AMP APPLICATIONS |
SANYO |
| 1094 |
2SD192 |
Low Frequency Small-Signal Transistor |
TOSHIBA |
| 1095 |
2SD194 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 1096 |
2SD1977 |
PNP EPITAXIAL/NPN SILICON TRIPLE DIFUSSED TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER |
Unknow |
| 1097 |
2SD2012 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 1098 |
2SD2102 |
SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMFPLIFIER |
Hitachi Semiconductor |
| 1099 |
2SD2108 |
SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 1100 |
2SD2228 |
NPN SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER |
NEC |
| 1101 |
2SD227 |
Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. |
USHA India LTD |
| 1102 |
2SD234 |
Audio Frequency Transistor |
TOSHIBA |
| 1103 |
2SD235 |
Audio Frequency Transistor |
TOSHIBA |
| 1104 |
2SD235 |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 1105 |
2SD2396 |
Low Frequency Transistor (60V/ 3A) |
ROHM |
| 1106 |
2SD2525 |
Transistor Silicon NPN Triple Diffused Type Audio Frequency Power Amplifier Applications |
TOSHIBA |
| 1107 |
2SD2582 |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS |
NEC |
| 1108 |
2SD2583 |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS |
NEC |
| 1109 |
2SD261 |
LOW FREQUENCY POWER AMPLIFIER |
USHA India LTD |
| 1110 |
2SD2636 |
Power transistor for low frequency applications |
TOSHIBA |
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