| No. |
Part Name |
Description |
Manufacturer |
| 961 |
2SC5120 |
High frequency amplifier |
Hitachi Semiconductor |
| 962 |
2SC515 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 963 |
2SC515A |
Audio Frequency Transistor |
TOSHIBA |
| 964 |
2SC517 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 965 |
2SC518383R |
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
NEC |
| 966 |
2SC5214 |
For Low Frequency Amplify Application Silicon Npn Epitaxial Type |
Isahaya Electronics Corporation |
| 967 |
2SC522 |
Silicon NPN triple diffused high frequency, high voltage transistor |
TOSHIBA |
| 968 |
2SC524 |
Silicon NPN triple diffused high frequency, high voltage transistor |
TOSHIBA |
| 969 |
2SC5336 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 970 |
2SC5337 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 971 |
2SC5338 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 972 |
2SC535 |
Silicon NPN Epitaxial Planar Transistor, intended for use in FM RF Amplifier, Frequency Converter, Local Oscillator |
Hitachi Semiconductor |
| 973 |
2SC5376 |
Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
| 974 |
2SC5376F |
Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
| 975 |
2SC5376FV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 976 |
2SC5390 |
Silicon NPN Epitaxial High Frequency Amplifier |
Hitachi Semiconductor |
| 977 |
2SC5398 |
For Llow Frequency Amplifty Application Silicom NPN Epitaxial Type Micro(Frame type) |
Isahaya Electronics Corporation |
| 978 |
2SC5431-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 979 |
2SC5432-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 980 |
2SC5433-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 981 |
2SC5434-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 982 |
2SC5435-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 983 |
2SC5436-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 984 |
2SC5437-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 985 |
2SC547 |
Silicon NPN epitaxial planar transistor, VHF power amplifier, frequency multiplier and RF power Driver applications |
TOSHIBA |
| 986 |
2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification |
Isahaya Electronics Corporation |
| 987 |
2SC5482 |
FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 988 |
2SC549 |
Silicon NPN epitaxial planar transistor, VHF power amplifier, frequency multiplier and RF power driver applications |
TOSHIBA |
| 989 |
2SC556 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 990 |
2SC558 |
Audio Frequency Transistor |
TOSHIBA |
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