| No. |
Part Name |
Description |
Manufacturer |
| 1081 |
2SC1213AKD |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
| 1082 |
2SC1213B |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 1083 |
2SC1213B |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
| 1084 |
2SC1213C |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 1085 |
2SC1213C |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
| 1086 |
2SC1213D |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 1087 |
2SC1213D |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
| 1088 |
2SC1576 |
Silicon NPN triple diffused high voltage transistor Vcbo=450V |
TOSHIBA |
| 1089 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
| 1090 |
2SC2073 |
POWER TRANSISTORS(1.5A,150V,25W) |
MOSPEC Semiconductor |
| 1091 |
2SC2464 |
Trans GP BJT NPN 50V 0.1A 3-Pin MPAK |
New Jersey Semiconductor |
| 1092 |
2SC283 |
Silicon NPN Epitaxial LTP Transistor Vcbo=50V, Pc=350mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 1093 |
2SC2837 |
POWER TRANSISTORS(10A,150V,100W) |
MOSPEC Semiconductor |
| 1094 |
2SC3245A |
900mW Lead frame NPN transistor, maximum rating: 150V Vceo, 100mA Ic, 150 to 500 hFE. Complementary 2SA1285A |
Isahaya Electronics Corporation |
| 1095 |
2SC3563 |
10A; 40W; V(ceo): 450V; NPN transistor. For switching regulation |
TOSHIBA |
| 1096 |
2SC3581 |
900mW Lead frame NPN transistor, maximum rating: 50V Vceo, 400mA Ic, 90 to 500 hFE. Complementary 2SA1399 |
Isahaya Electronics Corporation |
| 1097 |
2SC3928A |
200mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC3928 |
Isahaya Electronics Corporation |
| 1098 |
2SC4081UBHZG |
50V, 150mA, General purpose small signal amplifier (Corresponds to AEC-Q101) |
ROHM |
| 1099 |
2SC4081UBHZGTL |
50V, 150mA, General purpose small signal amplifier (Corresponds to AEC-Q101) |
ROHM |
| 1100 |
2SC4154 |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. |
Isahaya Electronics Corporation |
| 1101 |
2SC4155A |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC4155 |
Isahaya Electronics Corporation |
| 1102 |
2SC4448 |
Trans GP BJT NPN 250V 0.15A 3-Pin(3+Tab) TO-220NIS |
New Jersey Semiconductor |
| 1103 |
2SC4617EBHZG |
50V, 150mA, General purpose small signal amplifier (Corresponds to AEC-Q101) |
ROHM |
| 1104 |
2SC4617EBHZGTL |
50V, 150mA, General purpose small signal amplifier (Corresponds to AEC-Q101) |
ROHM |
| 1105 |
2SC4729 |
NPN Epitaxial Planar Silicon Transistors 50V/8A Switching Applications |
SANYO |
| 1106 |
2SC4737 |
NPN Epitaxial Planar Silicon Transistor 50V/2A Driver Applications |
SANYO |
| 1107 |
2SC4837 |
NPN Epitaxial Planar Silicon Transistor 50V/4A Switching Applications |
SANYO |
| 1108 |
2SC5210 |
500mW SMD NPN transistor, maximum rating: 250V Vceo, 100mA Ic, 55 to 230 hFE. |
Isahaya Electronics Corporation |
| 1109 |
2SC5383 |
125mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. |
Isahaya Electronics Corporation |
| 1110 |
2SC5658-HF |
Halogen Free Transistor, VCBO=60V, VCEO=50V, VEBO=7V, IC=150mA |
Comchip Technology |
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