No. |
Part Name |
Description |
Manufacturer |
991 |
2SA1304 |
Trans GP BJT PNP 150V 1.5A 3-Pin TO-220IS |
New Jersey Semiconductor |
992 |
2SA1305 |
Trans GP BJT PNP 50V 0.1A 3-Pin NS-B1 |
New Jersey Semiconductor |
993 |
2SA1307 |
Trans GP BJT PNP 50V 0.1A 3-Pin NS-B1 |
New Jersey Semiconductor |
994 |
2SA1360 |
Trans GP BJT PNP 150V 0.05A 3-Pin TO-126IS |
New Jersey Semiconductor |
995 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
996 |
2SA1576UBHZG |
PNP -50V -150mA General Purpose Transistor |
ROHM |
997 |
2SA1576UBHZGTL |
PNP -50V -150mA General Purpose Transistor |
ROHM |
998 |
2SA1774EBHZG |
PNP -50V -150mA General Purpose Transistor |
ROHM |
999 |
2SA1774EBHZGTL |
PNP -50V -150mA General Purpose Transistor |
ROHM |
1000 |
2SA1824 |
PNP Epitaxial Planar Silicon Transistors 50V/5A Switching Applications |
SANYO |
1001 |
2SA1825 |
PNP Epitaxial Planar Silicon Transistors 50V/8A Switching Applications |
SANYO |
1002 |
2SA1855 |
PNP Epitaxial Planar Silicon Transistor 50V/4A Switching Applications |
SANYO |
1003 |
2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. |
Isahaya Electronics Corporation |
1004 |
2SA2126 |
Bipolar Transistor -50V -3A VCE(sat);-270mV max. PNP Single TP/TP-FA |
ON Semiconductor |
1005 |
2SA537 |
Silicon PNP Epitaxial Planar Transistor Vcbo=-60V, Vceo=-50V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
1006 |
2SA671 |
POWER TRANSISTORS(3.0A,50V,25W) |
MOSPEC Semiconductor |
1007 |
2SA671 |
Trans GP BJT PNP 50V 0.5A 3-Pin TO-92 Tape and Box |
New Jersey Semiconductor |
1008 |
2SA673AB |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
1009 |
2SA673AC |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
1010 |
2SA673AD |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
1011 |
2SA673B |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
1012 |
2SA673C |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
1013 |
2SA673D |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
1014 |
2SA733 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
1015 |
2SA738 |
Trans GP BJT PNP 50V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
1016 |
2SA740 |
Trans GP BJT PNP 50V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
1017 |
2SA743 |
Trans GP BJT PNP 50V 1A 3-Pin TO-126 Mod |
New Jersey Semiconductor |
1018 |
2SA744 |
Trans GP BJT PNP 50V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
1019 |
2SA746 |
Trans GP BJT PNP 50V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
1020 |
2SA747 |
Trans GP BJT PNP 50V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
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