DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 50V

Datasheets found :: 7820
Page: | 26 | 27 | 28 | 29 | 30 | 31 | 32 | 33 | 34 |
No. Part Name Description Manufacturer
871 2N6397 12A silicon controlled rectifier. Vrsom 450V. General Electric Solid State
872 2N6398 12A silicon controlled rectifier. Vrsom 650V. General Electric Solid State
873 2N6400 Thyristor SCR 50V 160A 3-Pin(3+Tab) TO-220AB Box New Jersey Semiconductor
874 2N6402 16A silicon controlled rectifier. Vrsom 250V. General Electric Solid State
875 2N6403 16A silicon controlled rectifier. Vrsom 450V. General Electric Solid State
876 2N6404 16A silicon controlled rectifier. Vrsom 650V. General Electric Solid State
877 2N6421 Trans GP BJT PNP 250V 2A 3-Pin(2+Tab) TO-66 New Jersey Semiconductor
878 2N6428 Trans GP BJT NPN 50V 0.2A 3-Pin TO-92 Sleeve New Jersey Semiconductor
879 2N6428 Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
880 2N6428A Trans GP BJT NPN 50V 0.2A 3-Pin TO-92 New Jersey Semiconductor
881 2N6428A Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
882 2N6463 Trans GP BJT NPN 250V 0.1A New Jersey Semiconductor
883 2N6464 Trans GP BJT NPN 250V 0.1A New Jersey Semiconductor
884 2N6469 Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. General Electric Solid State
885 2N6486 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. General Electric Solid State
886 2N6489 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. General Electric Solid State
887 2N6493 Trans GP BJT NPN 350V 5A 3-Pin(3+Tab) TO-220 New Jersey Semiconductor
888 2N6494 Trans GP BJT NPN 350V 5A 3-Pin(3+Tab) TO-220 New Jersey Semiconductor
889 2N6497 Trans GP BJT NPN 250V 5A 3-Pin(3+Tab) TO-220 New Jersey Semiconductor
890 2N6497 Power 5A 250V Discrete NPN ON Semiconductor
891 2N6499 Trans GP BJT NPN 350V 5A 3-Pin(3+Tab) TO-220 New Jersey Semiconductor
892 2N650 Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 New Jersey Semiconductor
893 2N6504 Thyristor SCR 50V 250A 3-Pin(3+Tab) TO-220AB Bulk New Jersey Semiconductor
894 2N6511 Trans GP BJT NPN 250V 7A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
895 2N6513 Trans GP BJT NPN 350V 7A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
896 2N6515 0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE Continental Device India Limited
897 2N6515 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
898 2N6515 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
899 2N6516 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
900 2N6516 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD


Datasheets found :: 7820
Page: | 26 | 27 | 28 | 29 | 30 | 31 | 32 | 33 | 34 |



© 2024 - www Datasheet Catalog com