No. |
Part Name |
Description |
Manufacturer |
871 |
2N6397 |
12A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
872 |
2N6398 |
12A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
873 |
2N6400 |
Thyristor SCR 50V 160A 3-Pin(3+Tab) TO-220AB Box |
New Jersey Semiconductor |
874 |
2N6402 |
16A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
875 |
2N6403 |
16A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
876 |
2N6404 |
16A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
877 |
2N6421 |
Trans GP BJT PNP 250V 2A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
878 |
2N6428 |
Trans GP BJT NPN 50V 0.2A 3-Pin TO-92 Sleeve |
New Jersey Semiconductor |
879 |
2N6428 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
880 |
2N6428A |
Trans GP BJT NPN 50V 0.2A 3-Pin TO-92 |
New Jersey Semiconductor |
881 |
2N6428A |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
882 |
2N6463 |
Trans GP BJT NPN 250V 0.1A |
New Jersey Semiconductor |
883 |
2N6464 |
Trans GP BJT NPN 250V 0.1A |
New Jersey Semiconductor |
884 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
885 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
886 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
887 |
2N6493 |
Trans GP BJT NPN 350V 5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
888 |
2N6494 |
Trans GP BJT NPN 350V 5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
889 |
2N6497 |
Trans GP BJT NPN 250V 5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
890 |
2N6497 |
Power 5A 250V Discrete NPN |
ON Semiconductor |
891 |
2N6499 |
Trans GP BJT NPN 350V 5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
892 |
2N650 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
893 |
2N6504 |
Thyristor SCR 50V 250A 3-Pin(3+Tab) TO-220AB Bulk |
New Jersey Semiconductor |
894 |
2N6511 |
Trans GP BJT NPN 250V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
895 |
2N6513 |
Trans GP BJT NPN 350V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
896 |
2N6515 |
0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE |
Continental Device India Limited |
897 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
898 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
899 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
900 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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