| No. |
Part Name |
Description |
Manufacturer |
| 781 |
2N4014R |
Trans GP BJT NPN 50V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 782 |
2N4296 |
Trans GP BJT NPN 250V 1A |
New Jersey Semiconductor |
| 783 |
2N4298 |
Trans GP BJT NPN 350V 1A |
New Jersey Semiconductor |
| 784 |
2N4299 |
Trans GP BJT NPN 350V 1A |
New Jersey Semiconductor |
| 785 |
2N4409 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.250A Ic, 60 - 400 hFE |
Continental Device India Limited |
| 786 |
2N4929 |
Trans GP BJT PNP 150V 0.05A 3-Pin TO-39 |
New Jersey Semiconductor |
| 787 |
2N4931 |
Trans GP BJT PNP 250V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
| 788 |
2N5051 |
Trans GP BJT NPN 150V 2A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 789 |
2N5061 |
Thyristor .8A 50V |
ON Semiconductor |
| 790 |
2N5061RLRA |
Thyristor .8A 50V |
ON Semiconductor |
| 791 |
2N5063 |
Thyristor SCR 150V 10A 3-Pin TO-92 |
New Jersey Semiconductor |
| 792 |
2N5076 |
Trans GP BJT NPN 250V 3A 3-Pin TO-59 |
New Jersey Semiconductor |
| 793 |
2N5077 |
Trans GP BJT NPN 250V 3A 3-Pin TO-59 |
New Jersey Semiconductor |
| 794 |
2N5086 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 150 - hFE |
Continental Device India Limited |
| 795 |
2N5086 |
Trans GP BJT PNP 50V 0.05A 3-Pin TO-92 T/R |
New Jersey Semiconductor |
| 796 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 797 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 798 |
2N5087 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - hFE |
Continental Device India Limited |
| 799 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 800 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 801 |
2N5202 |
Trans GP BJT NPN 50V 4A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 802 |
2N5210 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 803 |
2N5210 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 804 |
2N522 |
Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 Ammo |
New Jersey Semiconductor |
| 805 |
2N5230 |
Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 T/R |
New Jersey Semiconductor |
| 806 |
2N5231 |
Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 T/R |
New Jersey Semiconductor |
| 807 |
2N5232 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
| 808 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
| 809 |
2N5232A |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
| 810 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
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