No. |
Part Name |
Description |
Manufacturer |
811 |
2N5239 |
Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 T/R |
New Jersey Semiconductor |
812 |
2N5249 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
813 |
2N5249 |
Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
814 |
2N5249A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
815 |
2N524A |
Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
816 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
817 |
2N5321 |
10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
818 |
2N5321 |
Trans GP BJT NPN 50V 2A 3-Pin TO-39 Box |
New Jersey Semiconductor |
819 |
2N5323 |
Trans GP BJT PNP 50V 2A 3-Pin TO-39 Box |
New Jersey Semiconductor |
820 |
2N5344 |
Trans GP BJT NPN 250V 1A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
821 |
2N5401 |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
822 |
2N5401 |
Trans GP BJT PNP 150V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
823 |
2N5401 |
Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
824 |
2N5401AI |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
825 |
2N5401SAM |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
826 |
2N5582 |
Trans GP BJT NPN 50V 0.8A 3-Pin TO-46 |
New Jersey Semiconductor |
827 |
2N5655 |
Trans GP BJT NPN 250V 1A 3-Pin TO-126 Box |
New Jersey Semiconductor |
828 |
2N5657 |
Trans GP BJT NPN 350V 1A 3-Pin TO-126 Box |
New Jersey Semiconductor |
829 |
2N5657 |
Power 1A 350V NPN |
ON Semiconductor |
830 |
2N5782 |
Trans GP BJT PNP 50V 3.5A 3-Pin TO-5 |
New Jersey Semiconductor |
831 |
2N5785 |
Trans GP BJT NPN 50V 3.5A 3-Pin TO-5 |
New Jersey Semiconductor |
832 |
2N5956 |
Silicon P-N-P medium-power transistor. -50V, 40W. |
General Electric Solid State |
833 |
2N6078 |
Trans GP BJT NPN 250V 7A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
834 |
2N6078AT |
Trans GP BJT NPN 250V 7A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
835 |
2N6079 |
Trans GP BJT NPN 350V 7A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
836 |
2N6100 |
Trans GP BJT PNP 50V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
837 |
2N6101 |
Trans GP BJT PNP 50V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
838 |
2N6102 |
Trans GP BJT PNP 50V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
839 |
2N6103 |
Trans GP BJT PNP 50V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
840 |
2N6104 |
Trans GP BJT PNP 50V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
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