| No. |
Part Name |
Description |
Manufacturer |
| 901 |
2N6517 |
0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 902 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 903 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 904 |
2N6518 |
High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 905 |
2N6518 |
High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 906 |
2N6520 |
0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 907 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 908 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 909 |
2N653 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 910 |
2N654 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 911 |
2N655 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 912 |
2N6557 |
Trans GP BJT NPN 250V 0.5A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
| 913 |
2N6559 |
Trans GP BJT NPN 350V 0.5A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
| 914 |
2N6579 |
Trans GP BJT NPN 350V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 915 |
2N658 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 916 |
2N6581 |
Trans GP BJT NPN 450V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 917 |
2N659 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 918 |
2N6654 |
Trans GP BJT NPN 350V 20A |
New Jersey Semiconductor |
| 919 |
2N6677 |
Trans GP BJT NPN 350V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 920 |
2N6725 |
Trans Darlington NPN 50V 2A 3-Pin TO-237 Tape and Box |
New Jersey Semiconductor |
| 921 |
2N6739 |
Trans GP BJT NPN 350V 10A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 922 |
2N6752 |
Trans GP BJT NPN 450V 10A |
New Jersey Semiconductor |
| 923 |
2N6757 |
N-Channel Power MOSFETs/ 9A/ 150V/200V |
Fairchild Semiconductor |
| 924 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 925 |
2N6758 |
N-Channel Power MOSFETs/ 9A/ 150V/200V |
Fairchild Semiconductor |
| 926 |
2N6759 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
| 927 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 928 |
2N6760 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
| 929 |
2N6761 |
N-Channel Power MOSFETs/ 4.5A/ 450V/500V |
Fairchild Semiconductor |
| 930 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
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