| No. |
Part Name |
Description |
Manufacturer |
| 751 |
2N3440L |
Trans GP BJT NPN 250V 1A 3-Pin TO-5 |
New Jersey Semiconductor |
| 752 |
2N3468 |
Trans GP BJT PNP 50V 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 753 |
2N3500 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 20 hFE. |
Continental Device India Limited |
| 754 |
2N3500 |
Trans GP BJT NPN 150V 0.3A 3-Pin TO-39 |
New Jersey Semiconductor |
| 755 |
2N3500L |
Trans GP BJT NPN 150V 0.3A 3-Pin TO-5 |
New Jersey Semiconductor |
| 756 |
2N3501 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 35 hFE. |
Continental Device India Limited |
| 757 |
2N3501 |
Trans GP BJT NPN 150V 3-Pin TO-39 |
New Jersey Semiconductor |
| 758 |
2N3501SP |
Trans GP BJT NPN 150V 3-Pin TO-39 |
New Jersey Semiconductor |
| 759 |
2N3507 |
Trans GP BJT NPN 50V 3A 3-Pin TO-39 |
New Jersey Semiconductor |
| 760 |
2N3507A |
Trans GP BJT NPN 50V 3A 3-Pin TO-39 |
New Jersey Semiconductor |
| 761 |
2N3510 |
Trans GP BJT NPN 150V 3-Pin TO-39 |
New Jersey Semiconductor |
| 762 |
2N3511 |
Trans GP BJT NPN 150V 3-Pin TO-39 |
New Jersey Semiconductor |
| 763 |
2N3525 |
Trans GP BJT NPN 150V 3-Pin TO-39 |
New Jersey Semiconductor |
| 764 |
2N3528 |
Trans GP BJT NPN 150V 3-Pin TO-39 |
New Jersey Semiconductor |
| 765 |
2N3529 |
Trans GP BJT NPN 150V 3-Pin TO-39 |
New Jersey Semiconductor |
| 766 |
2N3584 |
Trans GP BJT NPN 250V 5A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
| 767 |
2N3650 |
35A silicon controlled rectifier. Vrsom 150V. |
General Electric Solid State |
| 768 |
2N3668 |
12.5A silicon controlled rectifier. Vrm(non-rep) 150V. |
General Electric Solid State |
| 769 |
2N3725 |
1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 770 |
2N3725 |
Trans GP BJT NPN 50V 1.2A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 771 |
2N3725A |
Trans GP BJT NPN 50V 3-Pin TO-39 |
New Jersey Semiconductor |
| 772 |
2N3725AS |
Trans GP BJT NPN 50V 3-Pin TO-39 |
New Jersey Semiconductor |
| 773 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
| 774 |
2N3821 |
Trans JFET N-CH 50V 3-Pin TO-72 |
New Jersey Semiconductor |
| 775 |
2N3822 |
Trans JFET N-CH 50V 3-Pin TO-72 |
New Jersey Semiconductor |
| 776 |
2N3824 |
Trans JFET N-CH 50V 10mA Si 4-Pin TO-72 |
New Jersey Semiconductor |
| 777 |
2N3870 |
35A silicon controlled rectifier. Vrsom(non-rep) 150V. |
General Electric Solid State |
| 778 |
2N3896 |
35A silicon controlled rectifier. Vrsom(non-rep) 150V. |
General Electric Solid State |
| 779 |
2N3948 |
Trans GP BJT NPN 50V 3-Pin TO-39 |
New Jersey Semiconductor |
| 780 |
2N4014 |
Trans GP BJT NPN 50V 3-Pin TO-18 Box |
New Jersey Semiconductor |
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