No. |
Part Name |
Description |
Manufacturer |
1081 |
2N6569 |
NPN Power Transistor TO-3 |
National Semiconductor |
1082 |
2N6576 |
Leaded Power Transistor Darlington |
Central Semiconductor |
1083 |
2N6576 |
Trans Darlington Power Transistor 60V 15A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
1084 |
2N6577 |
Leaded Power Transistor Darlington |
Central Semiconductor |
1085 |
2N6577 |
Trans Darlington Power Transistor 90V 15A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
1086 |
2N6578 |
Leaded Power Transistor Darlington |
Central Semiconductor |
1087 |
2N6578 |
Trans Darlington Power Transistor 120V 15A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
1088 |
2N6594 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
1089 |
2N6594 |
PNP Power Transistor TO-3 |
National Semiconductor |
1090 |
2N6609 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
1091 |
2N6609 |
16A complementary power transistor 140V 150W |
Motorola |
1092 |
2N6648 |
Leaded Power Transistor Darlington |
Central Semiconductor |
1093 |
2N6649 |
Leaded Power Transistor Darlington |
Central Semiconductor |
1094 |
2N665 |
PNP germanium power transistor in military and industrial equipment |
Motorola |
1095 |
2N6650 |
Leaded Power Transistor Darlington |
Central Semiconductor |
1096 |
2N6666 |
Leaded Power Transistor Darlington |
Central Semiconductor |
1097 |
2N6667 |
Leaded Power Transistor Darlington |
Central Semiconductor |
1098 |
2N6668 |
Leaded Power Transistor Darlington |
Central Semiconductor |
1099 |
2N6671 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
1100 |
2N6672 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
1101 |
2N6673 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
1102 |
2N6674 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
1103 |
2N6675 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
1104 |
2N669 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
1105 |
2N696 |
NPN silicon annular transistor designed for small-signal amplifier |
Motorola |
1106 |
2N697 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
1107 |
2N697 |
NPN silicon annular transistor designed for small-signal amplifier |
Motorola |
1108 |
2N6985 |
125W 30 to 400MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
1109 |
2N6986 |
100W 30 to 500MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
1110 |
2N699 |
NPN silicon annular transistor designed for medium-current switching and amplifier applications |
Motorola |
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