No. |
Part Name |
Description |
Manufacturer |
991 |
2N6298 |
Leaded Power Transistor Darlington |
Central Semiconductor |
992 |
2N6299 |
Leaded Power Transistor Darlington |
Central Semiconductor |
993 |
2N6300 |
Leaded Power Transistor Darlington |
Central Semiconductor |
994 |
2N6301 |
Leaded Power Transistor Darlington |
Central Semiconductor |
995 |
2N6312 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
996 |
2N6313 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
997 |
2N6314 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
998 |
2N6315 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
999 |
2N6316 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
1000 |
2N6317 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
1001 |
2N6318 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
1002 |
2N6367 |
NPN silicon RF power transistor 9W (PEP) 12.5V, up to 30MHz |
Motorola |
1003 |
2N6370 |
NPN silicon RF power transistor 10W (PEP) 30MHz |
Motorola |
1004 |
2N6371 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
1005 |
2N6372 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
1006 |
2N6373 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
1007 |
2N6374 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
1008 |
2N6383 |
Leaded Power Transistor Darlington |
Central Semiconductor |
1009 |
2N6384 |
Leaded Power Transistor Darlington |
Central Semiconductor |
1010 |
2N6385 |
Leaded Power Transistor Darlington |
Central Semiconductor |
1011 |
2N6386 |
Leaded Power Transistor Darlington |
Central Semiconductor |
1012 |
2N6386 |
NPN Power Transistor TO-220 |
National Semiconductor |
1013 |
2N6386 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
1014 |
2N6387 |
Leaded Power Transistor Darlington |
Central Semiconductor |
1015 |
2N6387 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
1016 |
2N6388 |
Leaded Power Transistor Darlington |
Central Semiconductor |
1017 |
2N6388 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
1018 |
2N6420 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
1019 |
2N6420 |
Complementary Medium-Power High Voltage Power Transistor 35W 1A |
Motorola |
1020 |
2N6421 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
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