| No. |
Part Name |
Description |
Manufacturer |
| 1081 |
128-Z |
MOS Field Effect Power Transistors |
Unknow |
| 1082 |
12F10 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1083 |
12F100 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1084 |
12F100B |
V(rrm): 1000V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 1085 |
12F100R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1086 |
12F10R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1087 |
12F120 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1088 |
12F120B |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 1089 |
12F120R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1090 |
12F20 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1091 |
12F20R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1092 |
12F40 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1093 |
12F40R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1094 |
12F60 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1095 |
12F60R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1096 |
12F80 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1097 |
12F80R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1098 |
13003BR |
POWER TRANSISTORS(1.5A,300-400V,40W) |
MOSPEC Semiconductor |
| 1099 |
13003BR |
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS |
Motorola |
| 1100 |
132-Z |
MOS Field Effect Power Transistors |
Unknow |
| 1101 |
133-Z |
MOS Field Effect Power Transistors |
Unknow |
| 1102 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1103 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1104 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 1105 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 1106 |
150K100A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 1107 |
150K20A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 1108 |
150K40A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 1109 |
150K60A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 1110 |
150K80A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
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