No. |
Part Name |
Description |
Manufacturer |
1141 |
16F20 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
1142 |
16F20R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
1143 |
16F40 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
1144 |
16F40R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
1145 |
16F60 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
1146 |
16F60R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
1147 |
16F80 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
1148 |
16F80R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
1149 |
16GWJ2C42 |
SCHOTTKY BARRIER RECTIFIER STACK (SWITCHING TYPE POWER SUPPLY APPLICATION.) |
TOSHIBA |
1150 |
16GWJ2CZ47 |
SCHOTTKY BARRIER RECTIFIER STACK (SWITCHING TYPE POWER SUPPLY APPLICATION) |
TOSHIBA |
1151 |
16RIA |
MEDIUM POWER THYRISTORS |
International Rectifier |
1152 |
16RIA160M |
MEDIUM POWER THYRISTORS |
International Rectifier |
1153 |
16RIA160MS90 |
MEDIUM POWER THYRISTORS |
International Rectifier |
1154 |
16RIA160S90 |
MEDIUM POWER THYRISTORS |
International Rectifier |
1155 |
16RIF100W |
V(rrm): 1000V; 16A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
1156 |
16RIF100W |
V(rrm): 1000V; 16A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
1157 |
16RIF120W |
V(rrm): 1200V; 16A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
1158 |
16RIF120W |
V(rrm): 1200V; 16A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
1159 |
180T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
1160 |
181T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
1161 |
182T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
1162 |
1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
1163 |
1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
1164 |
183T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
1165 |
184T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
1166 |
184T2 |
Power NPN transistor - High Voltage |
SESCOSEM |
1167 |
185T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
1168 |
1951A |
Medium Power Microwave MESFET |
Mitsubishi Electric Corporation |
1169 |
19MT050XF |
500V Single N-Channel HEXFET Power MOSFET in a MTP package |
International Rectifier |
1170 |
1A313 |
High-Performance LED Power Transmission |
Mitel Semiconductor |
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