| No. |
Part Name |
Description |
Manufacturer |
| 11071 |
BFR360T |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 ideal for Oscillators up to 4GHz |
Infineon |
| 11072 |
BFR36A |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
| 11073 |
BFR37 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11074 |
BFR38 |
Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz |
SGS-ATES |
| 11075 |
BFR38 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11076 |
BFR380F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Phase Noise Oscillators up to 4GHz |
Infineon |
| 11077 |
BFR380L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for high IIP3 LNA and Low Phase Noise Oscillators |
Infineon |
| 11078 |
BFR380T |
RF-Bipolar - NPN Silicon RF transistor in SC75 package ideal for Low Phase Noise Oscillators up to 4GHz |
Infineon |
| 11079 |
BFR460L3E6327 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 11080 |
BFR49 |
NPN silicon microwave transistor, suitable for amplifiers up to S-band frequencies |
Philips |
| 11081 |
BFR90 |
Epitaxial planar NPN transistor, utilizing Planox® silicon nitride, intended for VHF-UHF wide band applications |
SGS-ATES |
| 11082 |
BFR90 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11083 |
BFR90A |
NPN silicon planar epitaxial transistor intended for use in VHF and UHF wideband amplifiers |
Philips |
| 11084 |
BFR90B |
Epitaxial planar NPN transistor, intended for high-gain, wide band, low noise application up to 1,5GHz |
SGS-ATES |
| 11085 |
BFR90H |
Epitaxial planar NPN transistor, intended for VHF-UHF wide-band application |
SGS-ATES |
| 11086 |
BFR91 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. |
Philips |
| 11087 |
BFR91 |
Epitaxial planar NPN transistor, designed for VHF-UHF medium level amplifier up to 1.5GHz |
SGS-ATES |
| 11088 |
BFR91 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11089 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
| 11090 |
BFR91H |
Epitaxial planar NPN transistor, designed for VHF-UHF wide-band application |
SGS-ATES |
| 11091 |
BFR92P |
NPN Silicon RF Transistor for broadba... |
Infineon |
| 11092 |
BFR92P |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers |
Infineon |
| 11093 |
BFR92T |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers and fast non-saturated switches |
Infineon |
| 11094 |
BFR92W |
NPN Silicon RF Transistor for broadba... |
Infineon |
| 11095 |
BFR92W |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers |
Infineon |
| 11096 |
BFR93A |
NPN Silicon RF Transistor for low noi... |
Infineon |
| 11097 |
BFR93A |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers |
Infineon |
| 11098 |
BFR93AT |
RF-Bipolar - NPN Silicon RF transistor for low distortion broadband amplifiers and oscillators in SC75 package |
Infineon |
| 11099 |
BFR93AW |
NPN Silicon RF Transistor for low dis... |
Infineon |
| 11100 |
BFR93AW |
RF-Bipolar - NPN Silicon RF transistor for low distortion broadband amplifiers/oscillators |
Infineon |
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