| No. |
Part Name |
Description |
Manufacturer |
| 11101 |
BFR949F |
RF-Bipolar - NPN Silicon RF transistor for low, high gain broadband amplifiers in TSFP-3 package |
Infineon |
| 11102 |
BFR949L3 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in TSLP-3 |
Infineon |
| 11103 |
BFR949T |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in SC-75 |
Infineon |
| 11104 |
BFR96 |
NPN silicon planar epitaxial transistor intended for use in UHF and microwave amplifiers |
Philips |
| 11105 |
BFR96 |
Epitaxial planar NPN transistor for VHF-UHF high level amplifier |
SGS-ATES |
| 11106 |
BFR96 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11107 |
BFR96H |
Epitaxial planar NPN transistor for VHF-UHF high level amplifier |
SGS-ATES |
| 11108 |
BFR96S |
NPN silicon planar epitaxial transistor, primarily intended for MATV applications |
Philips |
| 11109 |
BFR97 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11110 |
BFR98 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11111 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 11112 |
BFR99 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11113 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 11114 |
BFS17P |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers |
Infineon |
| 11115 |
BFS17S |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFS17W) for broadband amplifiers |
Infineon |
| 11116 |
BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA |
Infineon |
| 11117 |
BFS22 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 11118 |
BFS23 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz transmitters at 28 V supply voltage |
VALVO |
| 11119 |
BFS360L6 |
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz |
Infineon |
| 11120 |
BFS380L6 |
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package for LNA and VCO Modules up to 4GHz |
Infineon |
| 11121 |
BFS386L6 |
RF-Bipolar - NPN Silicon TWIN mixed type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz |
Infineon |
| 11122 |
BFS460L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 11123 |
BFS466L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 11124 |
BFS469L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 11125 |
BFS480 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR180W) for low noise, low power amplifiers |
Infineon |
| 11126 |
BFS481 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR181W) for low noise, high gain broadband amplifiers |
Infineon |
| 11127 |
BFS482 |
NPN Silicon RF Transistor for low noi... |
Infineon |
| 11128 |
BFS483 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR183W) for low noise, high gain broadband amplifiers |
Infineon |
| 11129 |
BFS50 |
Silicon NPN epitaxial planar transistor for VHF/UHF power stages, oscillators and driver stages for low supply voltage |
AEG-TELEFUNKEN |
| 11130 |
BFS50 |
Silicon NPN epitaxial planar transistor for VHF/UHF power stages, oscillators and driver stages for low supply voltage |
AEG-TELEFUNKEN |
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