| No. |
Part Name |
Description |
Manufacturer |
| 11071 |
BA3121F |
Ground isolation amplifier |
ROHM |
| 11072 |
BA3121F-E2 |
Ground Isolation Amplifier |
ROHM |
| 11073 |
BA3121N |
Ground isolation amplifier |
ROHM |
| 11074 |
BA3123F |
Ground Isolation Amplifier |
ROHM |
| 11075 |
BA3123F-E2 |
Ground Isolation Amplifier |
ROHM |
| 11076 |
BA4113 |
FM-IF System IC for Communication Equipment |
ROHM |
| 11077 |
BA4114 |
FM-IF System IC for Communication Equipment |
ROHM |
| 11078 |
BA4116FV |
Communications LSIs > RF signal processing of portables application > IF for radio communication |
ROHM |
| 11079 |
BA7046/F |
Multimedia LSIs > Multimedia video > SYNC separation IC |
ROHM |
| 11080 |
BA7062F |
Multimedia LSIs > Multimedia video > SYNC separation IC |
ROHM |
| 11081 |
BA7071F |
Multimedia LSIs > Multimedia video > SYNC separation IC |
ROHM |
| 11082 |
BA7078AF |
Synchronization signal processor for high definition displays |
ROHM |
| 11083 |
BA7078AS |
Synchronization signal processor for high definition displays |
ROHM |
| 11084 |
BAK-200, GAK-2 SERIES |
Strain Gage Application Kits |
Vishay |
| 11085 |
BAOOFP |
Low saturation voltage type 3-pin regulator |
ROHM |
| 11086 |
BAOOST |
Low saturation voltage type regulator with ON / OFF switch |
ROHM |
| 11087 |
BAOOT |
Low saturation voltage type 3-pin regulator |
ROHM |
| 11088 |
BAR80 |
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) |
Siemens |
| 11089 |
BAR80 |
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) |
Siemens |
| 11090 |
BAR81 |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 11091 |
BAR81 |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 11092 |
BAR81W |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 11093 |
BAR81W |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 11094 |
BAS125 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 11095 |
BAS125-04 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 11096 |
BAS125-04W |
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
Siemens |
| 11097 |
BAS125-05 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 11098 |
BAS125-05W |
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
Siemens |
| 11099 |
BAS125-06 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 11100 |
BAS125-06W |
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
Siemens |
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