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Datasheets for ATION

Datasheets found :: 34891
Page: | 369 | 370 | 371 | 372 | 373 | 374 | 375 | 376 | 377 |
No. Part Name Description Manufacturer
11161 BC207A NPN silicon transistor, audio amplification and general purpose SESCOSEM
11162 BC207B NPN silicon transistor, audio amplification and general purpose SESCOSEM
11163 BC208A NPN silicon transistor, audio amplification and general purpose SESCOSEM
11164 BC208B NPN silicon transistor, audio amplification and general purpose SESCOSEM
11165 BC208C NPN silicon transistor, audio amplification and general purpose SESCOSEM
11166 BC209B NPN silicon transistor, audio amplification and general purpose SESCOSEM
11167 BC209C NPN silicon transistor, audio amplification and general purpose SESCOSEM
11168 BC211 NPN silicon transistor, audio amplification and general purpose SESCOSEM
11169 BC211A NPN silicon transistor, audio amplification and general purpose SESCOSEM
11170 BC237 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
11171 BC237A NPN silicon transistor, audio amplification and general purpose SESCOSEM
11172 BC237B NPN silicon transistor, audio amplification and general purpose SESCOSEM
11173 BC238 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
11174 BC238A NPN silicon transistor, audio amplification and general purpose SESCOSEM
11175 BC238B NPN silicon transistor, audio amplification and general purpose SESCOSEM
11176 BC238C NPN silicon transistor, audio amplification and general purpose SESCOSEM
11177 BC239 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
11178 BC239B NPN silicon transistor, audio amplification and general purpose SESCOSEM
11179 BC239C NPN silicon transistor, audio amplification and general purpose SESCOSEM
11180 BC307 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
11181 BC307A PNP silicon transistor, audio amplification and general purpose SESCOSEM
11182 BC307VI PNP silicon transistor, audio amplification and general purpose SESCOSEM
11183 BC308 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
11184 BC308A PNP silicon transistor, audio amplification and general purpose SESCOSEM
11185 BC308B PNP silicon transistor, audio amplification and general purpose SESCOSEM
11186 BC308VI PNP silicon transistor, audio amplification and general purpose SESCOSEM
11187 BC309 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
11188 BC309A PNP silicon transistor, audio amplification and general purpose SESCOSEM
11189 BC309B PNP silicon transistor, audio amplification and general purpose SESCOSEM
11190 BC313 PNP silicon transistor, audio amplification and general purpose SESCOSEM


Datasheets found :: 34891
Page: | 369 | 370 | 371 | 372 | 373 | 374 | 375 | 376 | 377 |



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