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Datasheets for IFI

Datasheets found :: 156226
Page: | 366 | 367 | 368 | 369 | 370 | 371 | 372 | 373 | 374 |
No. Part Name Description Manufacturer
11071 2N1849 Industrial-type, silicon controlled rectifier in a stud package 16A Motorola
11072 2N1849A Industrial-type, silicon controlled rectifier in a stud package with current handling capability to 16A at junction temperature to 125°C Motorola
11073 2N1849A Industrial-type, silicon controlled rectifier in a stud package 16A Motorola
11074 2N1849A Controlled-rectifier RCA Solid State
11075 2N1850 Industrial-type, silicon controlled rectifier in a stud package 16A Motorola
11076 2N1850A Industrial-type, silicon controlled rectifier in a stud package with current handling capability to 16A at junction temperature to 125°C Motorola
11077 2N1850A Industrial-type, silicon controlled rectifier in a stud package 16A Motorola
11078 2N1850A Controlled-rectifier RCA Solid State
11079 2N1870 Silicon Controlled Rectifier Microsemi
11080 2N1870A Silicon Controlled Rectifier Microsemi
11081 2N1871 Silicon Controlled Rectifier Microsemi
11082 2N1871A Silicon Controlled Rectifier Microsemi
11083 2N1872 Silicon Controlled Rectifier Microsemi
11084 2N1872A Silicon Controlled Rectifier Microsemi
11085 2N1873 Silicon Controlled Rectifier Microsemi
11086 2N1874 Silicon Controlled Rectifier Microsemi
11087 2N1874A Silicon Controlled Rectifier Microsemi
11088 2N1889 NPN silicon epitaxy planar transistor for amplifier and switch applications ITT Semiconductors
11089 2N1890 NPN silicon epitaxy planar transistor for amplifier and switch applications ITT Semiconductors
11090 2N1890S NPN silicon amplifier transistor Motorola
11091 2N1893 NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) ITT Semiconductors
11092 2N1906 Germanium Diffused Collector PNP, typical application High Power Amplifier SGS-ATES
11093 2N1909 V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications International Rectifier
11094 2N1909 Silicon Controlled Rectifier Microsemi
11095 2N1910 V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications International Rectifier
11096 2N1910 Silicon Controlled Rectifier Microsemi
11097 2N1911 V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications International Rectifier
11098 2N1911 Silicon Controlled Rectifier Microsemi
11099 2N1912 V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications International Rectifier
11100 2N1912 Silicon Controlled Rectifier Microsemi


Datasheets found :: 156226
Page: | 366 | 367 | 368 | 369 | 370 | 371 | 372 | 373 | 374 |



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