| No. |
Part Name |
Description |
Manufacturer |
| 11101 |
2N1913 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 11102 |
2N1913 |
Silicon Controlled Rectifier |
Microsemi |
| 11103 |
2N1914 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 11104 |
2N1914 |
Silicon Controlled Rectifier |
Microsemi |
| 11105 |
2N1915 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 11106 |
2N1915 |
Silicon Controlled Rectifier |
Microsemi |
| 11107 |
2N1916 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 11108 |
2N1916 |
Silicon Controlled Rectifier |
Microsemi |
| 11109 |
2N1924 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 11110 |
2N1925 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 11111 |
2N1926 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 11112 |
2N1991 |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
| 11113 |
2N1991S |
PNP silicon amplifier and switching transistor |
Motorola |
| 11114 |
2N2023 |
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 11115 |
2N2023 |
Silicon Controlled Rectifier |
Microsemi |
| 11116 |
2N2024 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 11117 |
2N2024 |
Silicon Controlled Rectifier |
Microsemi |
| 11118 |
2N2025 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 11119 |
2N2025 |
Silicon Controlled Rectifier |
Microsemi |
| 11120 |
2N2026 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 11121 |
2N2026 |
Silicon Controlled Rectifier |
Microsemi |
| 11122 |
2N2027 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 11123 |
2N2027 |
Silicon Controlled Rectifier |
Microsemi |
| 11124 |
2N2028 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 11125 |
2N2028 |
Silicon Controlled Rectifier |
Microsemi |
| 11126 |
2N2029 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 11127 |
2N2029 |
Silicon Controlled Rectifier |
Microsemi |
| 11128 |
2N2030 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 11129 |
2N2030 |
Silicon Controlled Rectifier |
Microsemi |
| 11130 |
2N2049 |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
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