| No. |
Part Name |
Description |
Manufacturer |
| 11101 |
BFP360W |
RF-Bipolar - NPN Silicon RF transistor in 4pin SOT343 package ideal for Oscillators and VCOs up to 4GHz |
Infineon |
| 11102 |
BFP405 |
RF-Bipolar - NPN Silicon RF transistor for low current applications |
Infineon |
| 11103 |
BFP405 |
NPN Silicon RF Transistor (For low current applications For oscillators up to 12 GHz) |
Siemens |
| 11104 |
BFP405F |
RF-Bipolar - NPN Silicon RF transistor for low current applications in NEW thin small flatlead package TSFP-4 |
Infineon |
| 11105 |
BFP420 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain amplifiers |
Infineon |
| 11106 |
BFP420 |
NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) |
Siemens |
| 11107 |
BFP420F |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain amplifiers in NEW thin small flatlead package TSFP-4 |
Infineon |
| 11108 |
BFP450 |
RF-Bipolar - NPN Silicon RF transistor for medium power amplifiers |
Infineon |
| 11109 |
BFP450 |
NPN Silicon RF Transistor (For medium power amplifiers) |
Siemens |
| 11110 |
BFP490 |
NPN Silicon RF Transistor (Q62702-F1721) |
Siemens |
| 11111 |
BFP520 |
RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain amplifiers |
Infineon |
| 11112 |
BFP520 |
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
Siemens |
| 11113 |
BFP520F |
RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain amplifiers in NEW thin small flatlead package TSFP-4 |
Infineon |
| 11114 |
BFP540 |
RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain amplifiers |
Infineon |
| 11115 |
BFP540F |
RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain LNA in NEW thin small flatlead package TSFP-4 |
Infineon |
| 11116 |
BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package |
Infineon |
| 11117 |
BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4 |
Infineon |
| 11118 |
BFP640 |
Digital Transistors - NPN SiGe RF Transistor, high gain low noise RF transistor in SOT343 Package, 4V, 50mA |
Infineon |
| 11119 |
BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA |
Infineon |
| 11120 |
BFP81 |
NPN Silicon RF Transistor for low noi... |
Infineon |
| 11121 |
BFP81 |
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.) |
Siemens |
| 11122 |
BFP93 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
| 11123 |
BFP93A |
NPN Silicon RF Transistor for low dis... |
Infineon |
| 11124 |
BFP93A |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
| 11125 |
BFQ193 |
NPN Silicon RF Transistor for low noi... |
Infineon |
| 11126 |
BFQ193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 11127 |
BFQ19S |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and) |
Siemens |
| 11128 |
BFQ23C |
Silicon planar epitaxial gold-metallized PNP transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope |
Philips |
| 11129 |
BFQ28 |
LOW NOISE NPN SILICON MICROWAVE TRANSISTOR UP TO 4GHz |
Siemens |
| 11130 |
BFQ29 |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) |
Siemens |
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