| No. |
Part Name |
Description |
Manufacturer |
| 11221 |
BFR360L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Oscillators and VCO Modules up to 4GHz |
Infineon |
| 11222 |
BFR360T |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 ideal for Oscillators up to 4GHz |
Infineon |
| 11223 |
BFR36A |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
| 11224 |
BFR37 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11225 |
BFR38 |
Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz |
SGS-ATES |
| 11226 |
BFR38 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11227 |
BFR380F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Phase Noise Oscillators up to 4GHz |
Infineon |
| 11228 |
BFR380L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for high IIP3 LNA and Low Phase Noise Oscillators |
Infineon |
| 11229 |
BFR380T |
RF-Bipolar - NPN Silicon RF transistor in SC75 package ideal for Low Phase Noise Oscillators up to 4GHz |
Infineon |
| 11230 |
BFR460L3E6327 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 11231 |
BFR64 |
NPN silicon multi-emitter transistor in a capstan envelope |
Philips |
| 11232 |
BFR65 |
NPN multi-emitter silicon transistor in a capstan envelope |
Philips |
| 11233 |
BFR84 |
Field effect transistor N-channel |
mble |
| 11234 |
BFR90 |
NPN silicon high frequency transistor fT=5.0GHz 14mA |
Motorola |
| 11235 |
BFR90 |
NPN silicon planar epitaxial transistor in a subminiature plastic transfer-moulded T-package |
Philips |
| 11236 |
BFR90 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11237 |
BFR90A |
NPN silicon planar epitaxial transistor intended for use in VHF and UHF wideband amplifiers |
Philips |
| 11238 |
BFR91 |
NPN silicon high frequency transistor fT=5.0GHz 30mA |
Motorola |
| 11239 |
BFR91 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11240 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
| 11241 |
BFR92P |
NPN Silicon RF Transistor for broadba... |
Infineon |
| 11242 |
BFR92P |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers |
Infineon |
| 11243 |
BFR92P |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
| 11244 |
BFR92T |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers and fast non-saturated switches |
Infineon |
| 11245 |
BFR92W |
NPN Silicon RF Transistor for broadba... |
Infineon |
| 11246 |
BFR92W |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers |
Infineon |
| 11247 |
BFR92W |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
| 11248 |
BFR93A |
NPN Silicon RF Transistor for low noi... |
Infineon |
| 11249 |
BFR93A |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers |
Infineon |
| 11250 |
BFR93A |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA) |
Siemens |
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