| No. |
Part Name |
Description |
Manufacturer |
| 11341 |
BFT95 |
Epitaxial planar PNP transistor intended for high-gain wide-band applications up to 1.5GHz |
SGS-ATES |
| 11342 |
BFT95 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11343 |
BFT95H |
Epitaxial planar PNP transistor intended for common-emitter, high-gain wide band application up to 1.5Ghz |
SGS-ATES |
| 11344 |
BFT95H |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11345 |
BFT96 |
Epitaxial planar PNP transistor intended for use as driver or output stage in MATV application up to 800MHz |
SGS-ATES |
| 11346 |
BFT96 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11347 |
BFW10 |
Field effect transistor N-channel |
mble |
| 11348 |
BFW11 |
Field effect transistor N-channel |
mble |
| 11349 |
BFW12 |
Field effect transistor N-channel |
mble |
| 11350 |
BFW13 |
Field effect transistor N-channel |
mble |
| 11351 |
BFW16A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 11352 |
BFW16A |
NPN silicon multi-emitter transistor with the collector coneected to the case |
Philips |
| 11353 |
BFW16A |
Epitaxial planar NPN transistor intended for CATV-MATV amplifiers |
SGS-ATES |
| 11354 |
BFW16A |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11355 |
BFW16A |
NPN Transistor industrial type |
Siemens |
| 11356 |
BFW17 |
Silicon NPN epitaxial planar RF transistor of the multi-emitter design |
ICCE |
| 11357 |
BFW17A |
NPN silicon multi-emitter transistor with the collector coneected to the case |
Philips |
| 11358 |
BFW17A |
Epitaxial planar NPN transistor intended for CATV-MATV amplifiers |
SGS-ATES |
| 11359 |
BFW17A |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11360 |
BFW30 |
NPN Transistor industrial type |
Siemens |
| 11361 |
BFW30 |
Silicon NPN planar epitaxial transistor for vertical amplifiers in broadband oscillographs and for broadband amplifiers |
VALVO |
| 11362 |
BFW43 |
Transistor for general purpose amplifiers |
SGS-ATES |
| 11363 |
BFW44 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 11364 |
BFW44 |
Transistor for general purpose amplifiers |
SGS-ATES |
| 11365 |
BFW45 |
NPN silicon transistor intended for the output stage of the horizontal deflection amplifier |
ICCE |
| 11366 |
BFW46 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
| 11367 |
BFW47 |
Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage |
VALVO |
| 11368 |
BFW61 |
Field effect transistor N-channel |
mble |
| 11369 |
BFW63 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 11370 |
BFW64 |
Transistor for high frequency amplifiers |
SGS-ATES |
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