| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
MTB23P06E |
TMOS POWER FET 23 AMPERES 60 VOLTS |
Motorola |
| 1112 |
MTB23P06V |
TMOS POWER FET 23 AMPERES 60 VOLTS |
Motorola |
| 1113 |
MTB23P06V |
Power MOSFET 23 Amps, 60 Volts |
ON Semiconductor |
| 1114 |
MTB23P06V-D |
Power MOSFET 23 Amps, 60 Volts P-Channel D2PAK |
ON Semiconductor |
| 1115 |
MTB23P06VT4 |
Power MOSFET 23 Amps, 60 Volts |
ON Semiconductor |
| 1116 |
MTP23P06V |
TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM |
Motorola |
| 1117 |
MTP23P06V |
Power MOSFET 23 Amps, 60 Volts |
ON Semiconductor |
| 1118 |
MTP23P06V-D |
Power MOSFET 23 Amps, 60 Volts P-Channel TO-220 |
ON Semiconductor |
| 1119 |
MTW23N25E |
TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM |
Motorola |
| 1120 |
NCP45560 |
NCP45560 Datasheet - ecoSWITCH™ Advanced Load Management: 23A Integrated Load Switch w/ Ultra-Low RON, VIN Range= 0.5V-13.5V, Power Good Out, Adj. Slew Rate, Adj. Discharge, & Fault Protection |
ON Semiconductor |
| 1121 |
NSR0320MW2T1 |
Schottky Diode 23V Low Vf SOD323 |
ON Semiconductor |
| 1122 |
NTA4001N |
Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection |
ON Semiconductor |
| 1123 |
NTA4001NT1 |
Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection |
ON Semiconductor |
| 1124 |
NTA4001NT1G |
Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection |
ON Semiconductor |
| 1125 |
NTB23N03R |
Power MOSFET 23A, 25V, N-Channel D<sup>2</sup>PAK |
ON Semiconductor |
| 1126 |
NTB23N03RG |
Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK |
ON Semiconductor |
| 1127 |
NTB23N03RT4 |
Power MOSFET 23A, 25V, N-Channel D<sup>2</sup>PAK |
ON Semiconductor |
| 1128 |
NTB23N03RT4G |
Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK |
ON Semiconductor |
| 1129 |
NTD23N03R |
Power MOSFET 23A, 25V, N-Channel DPAK |
ON Semiconductor |
| 1130 |
NTD23N03R-001 |
Power MOSFET 23A, 25V, N-Channel DPAK |
ON Semiconductor |
| 1131 |
NTD23N03R-1G |
Power MOSFET 23A, 25V, N-Channel DPAK |
ON Semiconductor |
| 1132 |
NTD23N03RG |
Power MOSFET 23A, 25V, N-Channel DPAK |
ON Semiconductor |
| 1133 |
NTD23N03RT4 |
Power MOSFET 23A, 25V, N-Channel DPAK |
ON Semiconductor |
| 1134 |
NTD23N03RT4G |
Power MOSFET 23A, 25V, N-Channel DPAK |
ON Semiconductor |
| 1135 |
NTD5807N |
Power MOSFET, 40 V, 23 A, Single N-Channel |
ON Semiconductor |
| 1136 |
NTD6415AN |
Power MOSFET, 100 V, 23 A, 55 mΩ, N-Channel |
ON Semiconductor |
| 1137 |
NTE5074A |
Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 11.0V. Zener test current Izt = 23.0mA. |
NTE Electronics |
| 1138 |
NTE5187A |
Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 11V. Zener test current Izt = 230mA. |
NTE Electronics |
| 1139 |
NTE5222A |
Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 110V. Zener test current Izt = 23mA. |
NTE Electronics |
| 1140 |
NTE5582 |
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 600V. Max RMS on-state current It(rms) = 235A. |
NTE Electronics |
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