| No. |
Part Name |
Description |
Manufacturer |
| 1141 |
NTE5584 |
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 1200V. Max RMS on-state current It(rms) = 235A. |
NTE Electronics |
| 1142 |
NTMFS4122N |
Power MOSFET 30 V, 23 A, Single N-Channel SO-8 Flat Lead |
ON Semiconductor |
| 1143 |
NTTFS4930N |
Power MOSFET, 30 V, 23 A, Single N-Channel |
ON Semiconductor |
| 1144 |
NX3008PBK |
30 V, 230 mA P-channel Trench MOSFET |
Nexperia |
| 1145 |
NX3008PBK |
30 V, 230 mA P-channel Trench MOSFET |
NXP Semiconductors |
| 1146 |
P4KE220CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 209 V, Vbr(max) = 231 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1147 |
P4KE250CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 237 V, Vbr(max) = 263 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1148 |
P6KE220CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 209 V, Vbr(max) = 231 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1149 |
P6KE250CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 237 V, Vbr(max) = 263 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1150 |
P6KE27A |
Diode TVS Single Uni-Dir 23.1V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 1151 |
P6KE27ARL |
Diode TVS Single Uni-Dir 23.1V 600W 2-Pin Case 017AA-01 T/R |
New Jersey Semiconductor |
| 1152 |
P6KE27CA |
Diode TVS Single Bi-Dir 23.1V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
| 1153 |
PM15CHA060 |
Modules three IGBT inverter output, 15A, 230V |
Powerex Power Semiconductors |
| 1154 |
PMC520 |
PMC520 Octal Serial 232 Communication |
PMC-Sierra Inc |
| 1155 |
PSMN023-40YLC |
N-channel 40 V 23mΩ logic level MOSFET in LFPAK using NextPower technology |
NXP Semiconductors |
| 1156 |
PSMN023-80LS |
N-channel DFN3333-8 80 V 23 mΩ standard level MOSFET |
NXP Semiconductors |
| 1157 |
PSMN1R2-25YLD |
N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
Nexperia |
| 1158 |
PTAC240502FC-V1 |
High Power RF LDMOS FET 50W, 28V, 2300 - 2400 MHz |
Wolfspeed |
| 1159 |
PXAC241002FC-V1 |
High Power RF LDMOS FET 100W, 28V, 2300 - 2400 MHz |
Wolfspeed |
| 1160 |
PXAC241702FC-V1 |
High Power RF LDMOS FET 150W, 28V, 2300 - 2400 MHz |
Wolfspeed |
| 1161 |
PXAC243502FV-V1 |
High Power RF LDMOS FET 350W, 28V, 2300 - 2400 MHz |
Wolfspeed |
| 1162 |
QPA2626D |
17 - 23 GHz Low Noise Amplifier Die |
Qorvo |
| 1163 |
QPA3238 |
45 - 1003 MHz, 23 dB CATV GaAs / GaN Power Doubler Hybrid Amplifier |
Qorvo |
| 1164 |
QPA3250 |
CATV Power Double Hybrid 1218 MHz 23 dB |
Qorvo |
| 1165 |
QPA3340 |
45 - 1003 MHz, 23 dB CATV GaAs / GaN Power Doubler Hybrid Amplifier |
Qorvo |
| 1166 |
REC10-2305DRWL |
10W DC/DC converter with 23V input, +-5/+-1000mA output |
Recom International Power |
| 1167 |
REC10-2305DRWLZ |
10W DC/DC converter with 23V input, +-5/+-1000mA output |
Recom International Power |
| 1168 |
REC10-2305SRWL |
10W DC/DC converter with 23V input, 5/2000mA output |
Recom International Power |
| 1169 |
REC10-2305SRWLZ |
10W DC/DC converter with 23V input, 5/2000mA output |
Recom International Power |
| 1170 |
REC10-2312DRWLZ |
10W DC/DC converter with 23V input, +-12/+-416mA output |
Recom International Power |
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